Journal ArticleDOI
Hot carrier conduction, Hall mobility and injection characteristics of p-type Ge
B. R. Nag,P. Das,H. Paria +2 more
TLDR
In this paper, experimental conductivity and Hall voltage characteristics of a 32 Ω-cm p-type Ge sample for fields upto 2.5 kV/cm are presented.About:
This article is published in Physica D: Nonlinear Phenomena.The article was published on 1965-01-01. It has received 1 citations till now. The article focuses on the topics: Electron mobility & Hall effect.read more
Citations
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Journal ArticleDOI
Symmetry relations between the mobility and differential mobility-tensor components of cubic semiconductors in the hot carrier range
TL;DR: In this article, the properties of the mobility tensor and differential mobility-tensor components in the hot-carrier range are investigated in cubic semiconductors as regards to symmetry and independently from any scattering mechanism.
References
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Journal ArticleDOI
Mobility of Holes and Electrons in High Electric Fields
TL;DR: In this paper, the field dependence of mobility has been determined for electrons and holes in both germanium and silicon, and the observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{-}\frac{1}{2}}$.
Journal ArticleDOI
The field-dependence of carrier mobility in silicon and germanium
TL;DR: In this paper, the variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 105 V cm, and the variation was found to depend on hole concentration.
Journal ArticleDOI
Theory of transient phenomena in the transport of holes in an excess semiconductor
TL;DR: An analysis is given of the transient behavior of the density of holes n h in an excess semiconductor as a function of lime t and of position x with respect to the electrode from which they are being injected.
Journal ArticleDOI
Properties of Injected Plasmas in Indium Antimonide
TL;DR: In this paper, the authors measured the injection times of injected electron-hole pairs in p-type indium antimonide and pinching of the plasma was observed, showing a steep rise at voltages well below those required for brenl;down, indicating a large increase in carrier density before breakdown.
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