Journal ArticleDOI

# Hot carrier conduction, Hall mobility and injection characteristics of p-type Ge

, P. Das1, H. Paria1
01 Jan 1965-Physica D: Nonlinear Phenomena (North-Holland)-Vol. 31, Iss: 1, pp 33-48

TL;DR: In this paper, experimental conductivity and Hall voltage characteristics of a 32 Ω-cm p-type Ge sample for fields upto 2.5 kV/cm are presented.

AbstractExperimental conductivity and Hall voltage characteristics of a 32 Ω-cm p-type Ge sample for fields upto 2.5 kV/cm are presented. The contacts to the sample are non-injecting at low fields, but excess carriers are found to be injected at fields above 500 V/cm from the positive voltage end. The injected carriers are eliminated by the application of high transverse magnetic fields. The conductivity characteristics obtained from the initial part of the pulse are found to agree with those obtained by earlier workers. The Hall mobility characteristics obtained by applying high magnetic fields show a reduction with the electric field faster than that shown by the conductivity mobility. The injection density and injected carrier velocity are also obtained for different input currents. The carrier velocity is found to agree with that of holes calculated by using Herring's theory.

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TL;DR: In this article, the properties of the mobility tensor and differential mobility-tensor components in the hot-carrier range are investigated in cubic semiconductors as regards to symmetry and independently from any scattering mechanism.
Abstract: Properties of the mobility tensor and differential mobility-tensor components in the hot-carrier range are investigated in cubic semiconductors as regards to symmetry and independently from any scattering mechanism. It is shown that all the components can be deduced from only one diagonal and one nondiagonal component. General relations between components are established. Considering conduction of each valley brings additional information which is explicated for semiconductors with valleys lying along the

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##### References
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Journal ArticleDOI
TL;DR: In this paper, the field dependence of mobility has been determined for electrons and holes in both germanium and silicon, and the observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{-}\frac{1}{2}}$.
Abstract: The field dependence of mobility has been determined for electrons and holes in both germanium and silicon. The observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{\ensuremath{-}\frac{1}{2}}$ is 900 volts/cm for $n$-type germanium, 1400 volts/cm for $p$-type germanium, 2500 volts/cm for $n$-type silicon, and 7500 volts/cm for $p$-type silicon. These values of critical field are between two to four times those calculated on the basis of spherical constant energy surfaces in the Brillouin zone. A saturation drift velocity of ${6(10)}^{6}$ cm/sec is observed in germanium which is in good agreement with predictions based on scattering by the optical modes. Data on $n$-type germanium at 20\ifmmode^\circ\else\textdegree\fi{}K show a range over which impurity scattering decreases and the mobility increases with field until lattice scattering dominates as at the higher temperatures.

284 citations

Journal ArticleDOI
TL;DR: In this paper, the variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 105 V cm, and the variation was found to depend on hole concentration.
Abstract: The variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 105 V cm . For p-type silicon the variation is found to depend on hole concentration. For the other materials any variation with concentration must be smaller, and these experiments are inconclusive as to its existence.

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Journal ArticleDOI
TL;DR: An analysis is given of the transient behavior of the density of holes n h in an excess semiconductor as a function of lime t and of position x with respect to the electrode from which they are being injected.
Abstract: An analysis is given of the transient behavior of the density of holes n h in an excess semiconductor as a function of lime t and of position x with respect to the electrode from which they are being injected. When the geometry is one-dimensional, an exact solution for the function n h (x, t) can he constructed, provided certain simplifying assumptions are fulfilled, of which the most important are that there be no appreciate trapping of holes or electrons and that diffusion be negligible. An attempt is made to estimate the range of conditions over which the neglect of diffusion will be justified. A few applications of the theory to possible experiments are discussed.

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Journal ArticleDOI
TL;DR: In this paper, the authors measured the injection times of injected electron-hole pairs in p-type indium antimonide and pinching of the plasma was observed, showing a steep rise at voltages well below those required for brenl;down, indicating a large increase in carrier density before breakdown.
Abstract: Plasmas composed of injected electron-hole pairs in p-type indium antimonide were studied. The injection times were measured and pinching of the plasma was observed. The current-voltage curves show a steep rise at voltages well below those required for brenl;down, indicating a large increase in carrier density before breakdown. The Hall voltage measured as a function of current changed sign from that expected for hole transport to that expected for electron transport. Negative resistances were observed in the plasma in the presence of transverse magnetic fields. Longitudinal magnetic fields decreased the plasma density, probably because of an increased radial diffusion of the plasma to the surface. Coherent oscillations were observed on top of the pinch both with and without longitudinal fields, and their dependence on current and magnetic field is described. (auth)

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