Journal ArticleDOI
Hyperfine interactions of 111Cd in Ga2O3.
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TLDR
Perturbed-angular-correlation measurements were carried out after implantation of 111 In into amorphous and polycrystalline powder samples of α- and β- Ga 2 O 3, and single crystals of β-Ga 2 O3, and three electric-quadrupole interactions were observed.Abstract:
Perturbed-angular-correlation measurements were carried out after implantation of 111 In into amorphous and polycrystalline powder samples of α- and β-Ga 2 O 3 , and single crystals of β-Ga 2 O 3 . After annealing of the radiation damage the quadrupole hyperfine interactions of 111 Cd were determined. In both α- and β-crystalline phases, three electric-quadrupole interactions were observed. In addition, the orientations of the electric-field gradients in β-Ga 2 O 3 at the probe sites were determined. In β-Ga 2 O 3 preferential substitutional In occupation of the octahedral sites was foundread more
Citations
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Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique
TL;DR: In this article, X-ray diffraction and high-resolution transmission electron microscopy measurements identified an epitaxial relationship of β-Ga2O3 ( 2 ¯ 01 )||Al 2O3(0001) with β-G2O 3 ||Al 2 O3 1 1 ¯ 00 > and β-GA 2O 3||Al O3 11 2 ¯ 0 >.
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Optical absorption and photoconductivity at the band edge of β‐Ga2−xInxO3
TL;DR: In this article, a strong and broad absorption band in the energy range 3.5 to 4.5 eV appears, caused by charge transfer electron transitions from 2p oxygen to 5s indium energy levels in octahedral indium clusters.
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Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition
TL;DR: In this paper, the structural and optical properties of the Ga 2 O 3 thin films were investigated in detail and a schematic diagram was proposed to clarify the growth mechanism of the two-fold rotation domain structure.
Journal ArticleDOI
First-principles and time-differential γ − γ perturbed-angular-correlation spectroscopy study of structural and electronic properties of Ta-doped TiO 2 semiconductor
TL;DR: Errico et al. as mentioned in this paper used ion-implanted tracers to study the hyperfine interactions of metal impurities in the rutile structure of oxide semiconductors.
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Characterization of β-Ga2O3 epitaxial films grown on MgO (111) substrates by metal-organic chemical vapor deposition
TL;DR: In this paper, a schematic diagram was proposed to explain the structure relationship between the Ga2O3 film and the substrate and the average transmittance of the films in the visible wavelength range exceeded 91%.
References
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Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
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Crystal Structure of β‐Ga2O3
TL;DR: The crystal structure of β•Ga2O3 has been determined from single-crystal 3D x-ray diffraction data as mentioned in this paper, and the most probable space group to which the crystal belongs is C2h3-C2/m.
Journal ArticleDOI
Energy calibration of the 500 kV heavy ion implanter ionas
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
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Paramagnetic Resonance of Fe 3 + in Octahedral and Tetrahedral Sites in Yttrium Gallium Garnet (YGaG) and Anisotropy of Yttrium Iron Garnet (YIG)
TL;DR: The electron paramagnetic resonance spectrum of a small gallium impurity which enters substitutionally for the gallium in single crystals of yttrium gallium garnet was examined at 24 kMc/sec at 295\ifmmode^\circ\else\textdegree\fi{}K and 1.6
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Ion implantation and annealing of crystalline oxides and ceramic materials
C. W. White,Lynn A. Boatner,Philip S. Sklad,Carl J. McHargue,J. Rankin,G.C. Farlow,Michael J. Aziz +6 more
TL;DR: In this article, the response of several crystalline oxides or ceramic materials to ion implantation and subsequent thermal annealing is described, and the crystallization kinetics have been determined for both of these materials.