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Journal ArticleDOI

Hysteretic Characteristics of Pulsed Laser Deposited 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3/ZnO Bilayers.

TLDR
A bridge is built between the hysteretic behavior observed either in the C- E and current-electric field characteristics on a MFS structure and the current characteristics of the BCZT/ZnO bilayers in a metal-ferroelectric-semiconductor (MFS) configuration.
Abstract
In the present work, we study the hysteretic behavior in the electric-field-dependent capacitance and the current characteristics of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3 (BCZT)/ZnO bilayers depo...

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Citations
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Journal ArticleDOI

Resistive Switching Behavior in Ferroelectric Heterostructures.

TL;DR: The mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, the methods used to improve RS performance in recent years are summarized, existing problems in this field are identified, and future development trends are highlighted.
Journal ArticleDOI

Ferroelectric switching dynamics in 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 thin films

TL;DR: In this article, the effect of electric field on polarization switching kinetics has been investigated and has been analyzed by the nucleation limited switching model with a Lorentzian distribution function.
Journal ArticleDOI

Effect of ZnO surface morphology on its electrochemical performance

TL;DR: In this article, a new strategy combining ZnO nanowires and microsheets (μSs) was proposed to improve the morphology of ZnOs and achieve high electrochemical performance.
Journal ArticleDOI

Photo-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization

TL;DR: In this paper, the authors vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type), with a ferroelectric oxide (PbTiO3), and found that polarization at the interface promoted efficient charge separation of photo-generated carriers in 2D layers.
References
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Journal ArticleDOI

A Resistive Memory in Semiconducting BiFeO3 Thin‐Film Capacitors

TL;DR: A ferroelectric-resistive random access memory consisting of a conductive BiFeO3 epitaxial thin film with a unipolar diode current modulated by electric polarization orientation is reported.
Journal ArticleDOI

High responsivity ultraviolet photodetector realized via a carrier-trapping process

TL;DR: In this paper, a metal-semiconductor-metal structured ultraviolet (UV) photodetector has been fabricated from zinc oxide films, which can reach 26'000 A/W at 8 V bias.
Journal ArticleDOI

Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe Microscopy

TL;DR: It is shown how to probe the charge carrier density of zinc oxide thin films by Scanning Kelvin Probe Microscopy, a technique that allows measuring the contact potential difference between the tip and the sample surface with high spatial resolution and results inferred are in accordance with carrier concentration expected.
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