Ideal spin filters: A theoretical study of electron transmission through ordered and disordered interfaces between ferromagnetic metals and semiconductors
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TLDR
In this article, it is predicted that certain atomically ordered interfaces between some ferromagnetic metals (F) and semiconductors (S) should act as ideal spin filters that transmit electrons only from the majority spin bands or from the minority spin bands of the F to the S at the Fermi energy.Abstract:
It is predicted that certain atomically ordered interfaces between some ferromagnetic metals (F) and semiconductors (S) should act as ideal spin filters that transmit electrons only from the majority spin bands or only from the minority spin bands of the F to the S at the Fermi energy, even for F with both majority and minority bands at the Fermi level. Criteria for determining which combinations of F, S and interface should be ideal spin filters are formulated. The criteria depend only on the bulk band structures of the S and F and on the translational symmetries of the S, F and interface. Several examples of systems that meet these criteria to a high degree of precision are identified. Disordered interfaces between F and S are also studied and it is found that intermixing between the S and F can result in interfaces with spin anti-filtering properties, the transmitted electrons being much less spin polarized than those in the ferromagnetic metal at the Fermi energy. A patent application based on this work has been commenced by Simon Fraser University.read more
Citations
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
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Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Room temperature spin polarized injection in organic semiconductor
TL;DR: In this article, the first experimental evidence of room temperature direct spin polarized injection in sexithienyl (T 6 ), a prototypical organic semiconductor, from colossal magnetoresistance manganite La 0.7 Sr 0.3 MnO 3 (LSMO), was reported.
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Spin diffusion and injection in semiconductor structures: Electric field effects
Zhi-Gang Yu,Michael E. Flatté +1 more
TL;DR: In this paper, the authors derived a drift-diffusion equation for spin polarization in semiconductors by consistently taking into account electric-field effects and nondegenerate electron statistics and identified a high-field diffusive regime which has no analog in metals.
Journal ArticleDOI
Concepts for spin injection into semiconductors—a review
TL;DR: In this article, the suitability of different contact types for spin injection is discussed together with a review of possible detection mechanisms that can be used in the experiment, and the first estimate of the injection efficiency can easily be obtained without complicated calculations.
References
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Book
Handbook of the Band Structure of Elemental Solids
TL;DR: In this article, the authors propose a spin-orbit coupling for Harrison's theory of the diamond structure of groups III and IV of free-electron-like metals.