Journal ArticleDOI
InAs1-xPx nanowires for device engineering.
Ann Persson,Mikael Björk,Sören Jeppesen,Jakob Birkedal Wagner,L. R. Wallenberg,Lars Samuelson +5 more
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In this paper, the growth of homogeneous InAs1-xPx nanowires as well as InAs 1-xpx heterostructure segments was studied as a function of TBP/TBAs ratio, temperature and diameter of the wires.Abstract:
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2 eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at room temperature. (Less)read more
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Controlled polytypic and twin-plane superlattices in iii-v nanowires.
Philippe Caroff,Kimberley A. Dick,Jonas Johansson,Maria E. Messing,Knut Deppert,Lars Samuelson +5 more
TL;DR: By selectively tuning the crystal structure, this work fabricates highly reproducible polytypic and twin-plane superlattices within single nanowires, which could lead to bandgap engineering and novel electronic behaviour.
Journal ArticleDOI
Synthesis of inorganic nanomaterials
C. N. R. Rao,C. N. R. Rao,S. R. C. Vivekchand,Kanishka Biswas,Kanishka Biswas,A. Govindaraj,A. Govindaraj +6 more
TL;DR: A perspective on the present status of inorganic nanomaterials is provided, including a discussion of nanocrystals and nanowires of metals, oxides, chalcogenides and pnictides, and some aspects of core-shell particles, oriented attachment and the use of liquid-liquid interfaces are presented.
Journal ArticleDOI
A review of nanowire growth promoted by alloys and non-alloying elements with emphasis on Au-assisted III-V nanowires
TL;DR: A review of the current understanding of particle-assisted nanowire growth can be found in this paper, where the authors give an overview of the historical development of the VLS model, with a discussion of potential growth mechanisms in particular the enhancement of growth rate in one dimension due to preferential deposition at the particle-wire interface.
Journal ArticleDOI
The synthesis and fabrication of one-dimensional nanoscale heterojunctions.
TL;DR: This review separates the methods into vapor-phase synthesis, solution- phase synthesis, template-based synthesis, and other approaches, such as lithography, electrospinning, and assembly, used to form a variety of heterojunctions from different combinations of semiconductor, metal, carbon, and polymeric materials.
Journal ArticleDOI
The morphology of axial and branched nanowire heterostructures.
Kimberly A. Dick,Suneel Kodambaka,Mark C. Reuter,Knut Deppert,Lars Samuelson,Werner Seifert,L. Reine Wallenberg,Frances M. Ross +7 more
TL;DR: It is demonstrated that branched nanowire heterostructures, also known as nanotrees, can be successfully explained by the same model and suggested that, for any pair of materials, it should be easier to form a straight wire with one interface direction than the other.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
General Synthesis of Compound Semiconductor Nanowires
Xiangfeng Duan,Charles M. Lieber +1 more
TL;DR: In this article, the authors describe the predictable synthesis of a broad range of binary and ternary III±V, II±VI, and IV±IV group semiconductor nanowires using the laser-assisted catalytic growth (LCG) method.
Journal ArticleDOI
One-dimensional heterostructures in semiconductor nanowhiskers
Mikael Björk,B. J. Ohlsson,T Sass,Ann Persson,Claes Thelander,Martin Magnusson,Knut Deppert,L. R. Wallenberg,Lars Samuelson +8 more
TL;DR: In this paper, the InAs/InP material system was shown to be atomically sharp and the interfaces between InAs and InP were shown to have a barrier height of 0.6 eV.
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Equilibrium limits of coherency in strained nanowire heterostructures
TL;DR: In this paper, a variational approach is used to show that nanowire heterostructures are more effective at relieving mismatch strain coherently, in which the mismatch strain is shared by the overlayer and underlayer, and could as well be partially accomodated by the mesh.
Journal ArticleDOI
Role of surface diffusion in chemical beam epitaxy of InAs nanowires
TL;DR: In this paper, growth studies of InAs nanowires nucleated from lithographically positioned Au seeds on InAs (111)B substrates were performed and the results indicated that 80% of the growth is due to In species diffusing from the ( 111)B substrate surface.