Inclusion of Indium, with doping in the barriers of In x Ga 1-x N/In y Ga 1-y N quantum wells reveals striking modifications of the emission properties with current for better operation of LEDs

TLDR: In this paper, the incorporation of Indium (In) in the GaN barrier layers, with an aim of increasing the overlap of electron and hole wave functions, has been investigated.

Abstract: Although that the continuous tunability of InGaN/GaN QW LEDs, carries the promise of a significant impact in optoelectronics, the reduction of the square of the overlap of electron and hole wave functions ( M e h 2 ) in InGaN/GaN QW LEDs, under certain conditions, is a sizable problem, difficult to overcome. Theoretical investigations have been carried out on the incorporation of Indium (In) in the GaN barrier layers, with an aim of increasing the overlap of electron and hole wave functions. Rigorous studies through the self consistent solution of Schrodinger and Poison equations expose some new and striking results. With suitable doping, the inclusion of In in the barriers can increase M e h 2 to more than two times that of a conventional InGaN/GaN QW LED. In in the barrier along with doping may be suitably utilized to tailor the transition energy and M e h 2 with current density, as desired. The transition energy and the M e h 2 may be made to have a positive or a negative slope with current density or they may be made fairly constant. This paper will outline the theoretical details, computational methodologies, the parameters used, and the striking new results with suitable depictions and discussions. These new information ought to be interesting for current optoelectronics.