Journal ArticleDOI
Influence of channel doping-profile on camel-gate field effect transistors
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TLDR
In this article, the performance dependence on the doping profile of a channel was investigated and it was found that a high doping channel would provide a large transconductance which is suitable for logic applications.Abstract:
We report the performance of GaAs camel-gate FETs and its dependence on device parameters. In particular, the performance dependence on the doping-profile of a channel was investigated. In this study, one-step, bi-step, and tri-step doping channels with the same doping-thickness product are employed in camel-gate FETs, while keeping other parameters unchanged, For a one-step doping channel FET, theoretical analysis reveals that a high doping channel would provide a large transconductance which is suitable for logic applications. Decreasing the channel concentration increases the drain current and the barrier height. For a tri-step doping channel FET, it is found that the output drain current and the barrier height remain large and the relatively voltage-independent transconductance is also increased. These are the requirements for the large input signal power amplifiers. A fabricated camel-gate FET with a tri-step doping channel exhibits a large drain current density larger than 750 mA/mm and a potential barrier greater than 1.0 V. Furthermore, the relatively voltage-independent transconductance is as high as 220 mS/mm and the applied gate voltage is up to +1.5 V. A 1.5/spl times/100 /spl mu/m/sup 2/ device is found to have a f/sub t/ of 30 GHz with a very low input capacitance.read more
Citations
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Journal ArticleDOI
The potential of III-V semiconductors as terrestrial photovoltaic devices
Matteo Bosi,C. Pelosi +1 more
TL;DR: In this article, the situation of semiconductor solar cell materials, focusing on Si, GaAs, InGaP and multijunction solar cells, is reviewed and future trends and possibilities of bringing III-V technology from space to Earth are discussed.
Journal ArticleDOI
Improved breakdown in LP-MOCVD grown n+-GaAs/(P+)-GaInP/n-GaAs heterojunction camel-gate FET
TL;DR: In this paper, the authors reported the fabrication of n/sup +/-GaAs/spl delta/(P/sup +/)-GaInP/n-GaAs heterojunction camel-gate field effect transistors by LP-MOCVD.
Journal ArticleDOI
New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD
TL;DR: In this paper, a self-aligned T-gate InGaP/GaAs FET with a reduced effective length is presented, which exhibits an extrinsic transconductance, unity-current gain frequency, and unity-power gain frequency of 78 (80) mS/mm, 9 (19.5), and 28 (30) GHz, respectively.
Journal ArticleDOI
Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
Wen Shiung Lour,Wen Lung Chang,Wen-Chau Liu,Yung Hsin Shie,Hsi Jen Pan,Jing Yuh Chen,Wei Chou Wang +6 more
TL;DR: In this article, pseudomorphic high electron-mobility transistors have been successfully fabricated and demonstrated in both direct-current and alternating-current performance together with a wide-gap Ga051In049P gate insulator, a gate-to-drain breakdown voltage of 33 V was further improved to over 40 V by selectively removing mesa sidewalls.
Journal ArticleDOI
On the InGaP/GaAs/InGaAs camel-like FET for high-breakdown, low-leakage, and high-temperature operations
TL;DR: In this article, a field effect transistor using a high barrier n/sup +/ -GaAs/p/sup +/-InGaP/n-GaAs camel-like gate and GaAs/InGaAs heterostructure-channel has been fabricated successfully and demonstrated.
References
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Journal ArticleDOI
A majority‐carrier camel diode
Abstract: A majority‐carrier diode concept is described in which current flow is controlled by a potential hump in the bulk of a semiconductor. Devices of this type, called camel diodes, having ideality factors <2 have been realized using low‐energy ion implantation.
Journal ArticleDOI
A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)
TL;DR: In this paper, a high-current drivability doped-channel MIS-like FET (DMT) has been proposed, which takes advantage of high saturation current with large transconductance and high breakdown voltage, in regard to its operating principle.
Journal ArticleDOI
An In 0.52 Al 0.48 As/n + -In 0.53 Ga 0.47 As MISFET with a heavily doped channel
J.A. del Alamo,Takashi Mizutani +1 more
TL;DR: An In 0.52 Al 0.48 As/n+-In 0.53 Ga 0.47 As MIS-type field effect transistor (FET) with a channel doped at a 7 × 1017cm-3 level has been fabricated on an InP substrate as mentioned in this paper.
Journal ArticleDOI
Analysis of camel gate FET's (CAMFET's)
TL;DR: In this article, the performance of the camel gate GaAs FET's and its dependence on device parameters has been described, in particular the dependence of the performance on the doping-thickness product of the p+layer was examined.
Journal ArticleDOI
Normally-on and normally-off camel diode gate GaAs field effect transistors for large scale integration
TL;DR: In this paper, the authors used a camel diode gate formed from n+ and p+ layers instead of a Schottky barrier gate as used in metal-semiconductor field effect transistors.