Journal ArticleDOI
Influence of microstructure and hydrogen concentration on amorphous silicon crystallization
Nicolas Budini,Pablo Andres Rinaldi,Javier Alejandro Schmidt,Roberto Delio Arce,R.H. Buitrago +4 more
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TLDR
In this paper, the transition from an amorphous to a crystalline material, induced by a four-step thermal annealing sequence, has been followed, and a correlation between these measurements allows to analyze the evolution of structural properties of the samples.About:
This article is published in Thin Solid Films.The article was published on 2010-07-01. It has received 46 citations till now. The article focuses on the topics: Nanocrystalline silicon & Amorphous solid.read more
Citations
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Methods of manufacturing semiconductor devices
TL;DR: In this article, a gate insulating layer on an active region of a self-aligned silicide (salicide) region and a non-self aligned silicide region of the semiconductor substrate is presented.
Journal ArticleDOI
Optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by rf-PECVD
Goh Boon Tong,Zarina Aspanut,Muhamad Rasat Muhamad,Muhamad Rasat Muhamad,Saadah Abdul Rahman +4 more
TL;DR: In this paper, the optical properties and crystallinity of hydrogenated nanocrystalline silicon (nc-Si:H) thin films prepared in a home-built radio-frequency (rf) plasma enhanced chemical vapour deposition (PECVD) system have been studied.
Journal ArticleDOI
Kinetics of solid phase crystallization of amorphous silicon analyzed by Raman spectroscopy
Won-Eui Hong,Jae-Sang Ro +1 more
TL;DR: In this article, solid phase crystallization (SPC) of amorphous silicon films grown by low pressure chemical vapor deposition was conducted using a tube furnace in nitrogen ambient at temperatures ranging from 560 °C to 1000 C.
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Structural and optical properties of nc-Si:H thin films deposited by layer-by-layer technique
TL;DR: In this paper, the effects of rf power on the interlayer elemental profiling, structural and optical properties of the films were investigated by Auger electron spectroscopy, Fourier transform infrared (FTI), Raman scattering and X-ray diffraction.
References
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Journal ArticleDOI
Determination of the thickness and optical constants of amorphous silicon
TL;DR: In this article, a rigorous expression for the transmission of a thin absorbing film on a transparent substrate is manipulated to yield formulae in closed form for the refractive index and absorption coefficient.
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Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
TL;DR: In this article, the number and nature of the silicon-hydrogen bonds in amorphous silicon films prepared in plasmas either of silane or of hydrogen and argon were studied.
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Deposition of device quality, low H content amorphous silicon
TL;DR: In this paper, it was shown that hydrogenated amorphous silicon containing as little as 1/10 the bonded H observed in device-quality glow discharge films have been deposited by thermal decomposition of silane on a heated filament.
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Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
TL;DR: In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.
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Vacancies and voids in hydrogenated amorphous silicon
TL;DR: In this article, the authors studied the hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network by means of infrared absorption spectroscopy.