Journal ArticleDOI
InGaP/GaAs single- and double-heterojunction bipolar transistors grown by organometallic vapour phase epitaxy
TLDR
In this paper, double-heterojunction bipolar transistors (DHBTs) grown by organometallic vapour phase epitaxy (OPE) were used for the first successful fabrication of DHBTs for this material system.Abstract:
InGaP/GaAs single-heterojunction bipolar transistors (HBTs) and double-heterojunction bipolar transistors (DHBTs) grown by organometallic vapour phase epitaxy are reported. A current gain beta =40 was obtained for 90 mu m diameter HBT devices at a base-collector bias of 0 V. The base carbon-doping concentration for the devices was 2*1019 cm-3 and the sheet resistivity ( rho s) of the base layer was 600 Omega / Square Operator . For the DHBTs, a current gain beta =27 was obtained for a base-collector bias of 2 V. The carbon doping concentration in these devices was 8*1018 cm-3 with rho s=1400 Omega / Square Operator . This represents the first successful fabrication of DHBTs for this material system.read more
Citations
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Journal ArticleDOI
Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base
TL;DR: In this paper, a comparison of MOCVD-grown, np-n In/sub 0.5/P/GaAs single and double-heterojunction bipolar transistors (SHBTs and DHBTs) with a carbon-doped base is presented.
Journal ArticleDOI
Improved performance of carbon-doped GaAs base heterojunction bipolar transistors through the use of InGaP
TL;DR: In this paper, the authors demonstrate for the first time that carbon-doped GaAs/AlGaAs heterojunction bipolar transistors (HBTs) can be overcome through the use of InGaP.
Journal ArticleDOI
Gas source molecular beam epitaxial growth and device applications in In0.5Ga0.5P and In0.5Al0.5P heterostructures
TL;DR: In this paper, a review of the recent progress in the In 0.5 Ga0.5 P epilayers lattice-matched to GaAs grown by gas source molecular beam rpitaxy (GSMBE) is presented.
Journal ArticleDOI
Design and performance of tunnel collector HBTs for microwave power amplifiers
TL;DR: In this paper, an improved HBT structure using a 100/spl Aring/-thick layer of GaInP between the GaAs base and collector layers is presented to address issues currently problematic for these devices: high offset and knee voltages and saturation charge storage.
Journal ArticleDOI
Carbon-impurity incorporation during the growth of epitaxial group III–V materials
Cammy R. Abernathy,W. S. Hobson +1 more
TL;DR: In this paper, a review of the incorporation and behaviour of carbon in group III-V materials is presented, and the potential sources for the introduction of carbon to the growth front are compared in the light of their utility for obtaining high well-confined acceptor profiles, such as are required in the latest generation electronic and photonic devices.
References
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Journal ArticleDOI
Heterostructure bipolar transistors and integrated circuits
TL;DR: In this paper, the authors propose an inverted transistor strucure with a smaller collectors on top and a larger emitter on the bottom, with speed advantages over the common "emitter-up" design.
Journal ArticleDOI
Heterostructure bipolar transistors: What should we build?
TL;DR: Two new conceptual developments extending earlier concepts about emitter/base junction grading and an extension of permeable base transistor technology to bipolar transistors in what is called a gridded‐base bipolar transistor are proposed.
Journal ArticleDOI
Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
M.J. Mondry,Herbert Kroemer +1 more
TL;DR: The first N-p-n heterojunction bipolar transistor (HBT) using a (Ga,In)P/GaAs heter-junction emitter on a GaAs base was reported in this article.
Journal ArticleDOI
High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor
TL;DR: In this paper, high quality AlGaAs using trimethylamine alane (TMAAl) as the aluminum source were grown by low pressure (30 Torr) organometallic vapor phase epitaxy (OMVPE) using a novel precursor.
Journal ArticleDOI
First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT
Sylvain Delage,M.A. di Forte-Poisson,Herve Blanck,Christian Brylinski,Eric Chartier,P. Collot +5 more
TL;DR: In this paper, the microwave characterisation of GaInP/GaAs HBTs is reported and the transistor design is basically multimesas and the devices are obtained using a combination of dry and wet etching.
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Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy
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