Initial stages of the Pd−GaAs reaction: formation and decomposition of ternary phases
TLDR
In this paper, the initial stages of the Pd-GaAs reactions are studied by high resolution transmission electron microscopy, electron diffraction and energy-dispersive analysis of X-rays.About:
This article is published in Thin Solid Films.The article was published on 1986-02-01 and is currently open access. It has received 73 citations till now. The article focuses on the topics: Ternary operation & High-resolution transmission electron microscopy.read more
Citations
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Development of refractory ohmic contact materials for gallium arsenide compound semiconductors
TL;DR: In this article, the authors developed low resistance, refractory ohmic contact materials to n-type GaAs using the deposition and annealing techniques, and it was found that the growth of homo-or hetero-epitaxial intermediate semiconductor layers (ISL) on the GaAs surface was essential for the low resistance Ohmic contact formation.
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Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies
TL;DR: In this article, the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C were investigated by applying high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry.
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Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
Eli Yablonovitch,Timothy D. Sands,D. M. Hwang,I. Schnitzer,T. J. Gmitter,S. K. Shastry,D. S. Hill,J. C. C. Fan +7 more
TL;DR: In this article, the authors proposed a new type of wafer bonding, which employs free standing III-V films as created by epitaxial liftoff and showed that the resulting metallurgical bond is an ohmic contact, a thermal contact and a robust, permanent, adherent contact.
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A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt)
TL;DR: In this article, the final phases produced by the reactions between GaAs and thin metal films of Co, Rh, Ir, Ni, Pd, and Pt have been investigated.
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Solid-phase regrowth of compound semiconductors by reaction-driven decomposition of intermediate phases
TL;DR: In this paper, the solid-phase epitaxial regrowth of a III-V compound semiconductor by a two-stage reaction between two-layer metallization and a compound substrate is described.
References
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Schottky barriers: An effective work function model
John L. Freeouf,Jerry M. Woodall +1 more
TL;DR: In this paper, a new model of Fermi-level pinning at the interfaces of compound semiconductor substrates and metallic or oxide overlayers was proposed, which assumes the standard Schottky picture of interface band alignment, but the interface phases involved are not the pure metal or oxide normally assumed by other models.
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Alloying reaction in thin nickel films deposited on GaAs
TL;DR: In this paper, the alloying reaction in a thin nickel film deposited on a GaAs substrate was investigated using microprobe Auger spectroscopy, reflection high energy electron diffraction and transmission electron diffusion.
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Contact reactions in Pd/GaAs junctions
TL;DR: In this paper, the solid-state reaction of thin Pd films with GaAs substrates has been investigated using Auger sputter profiling, x-ray diffraction, Heion backscattering, and sheet-resistivity measurements.
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Palladium on GaAs: A reactive interface
TL;DR: In this paper, the formation and properties of ≊15 nm films of Pd on GaAs(100) and (110) substrates as a function of annealing temperature were studied.
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Arsenides of the transition metals vii. the palladium-arsenic system,
TL;DR: In the Pd-As system, the existence of seven intermediate phases, PdAs2, α-Pd2As, β-Pdr2A, Pdr3As and Pd5As, has been established by X-ray diffraction and thermal analysis as mentioned in this paper.