Journal ArticleDOI
Interface-state measurements at Schottky contacts: A new admittance technique.
TLDR
A new characterization method is presented for traps at the interfacial layer of Schottky contacts based on ac-admittance measurements and a new trap transistor model which quantitatively explains the measured ac behavior as well as the dc characteristics.Abstract:
We present a new characterization method for traps at the interfacial layer of Schottky contacts. This method is based on ac-admittance measurements and a new trap transistor model which quantitatively explains the measured ac behavior as well as the dc characteristics. In particular we propose the ac current across the interface to consist of capacitive as well as of conductive parts. We apply the analysis to Au/GaAs Schottky contacts and find a weak energy dependence for the density of interface states in the band gap of GaAs.read more
Citations
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Journal ArticleDOI
Barrier inhomogeneities at Schottky contacts
TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Journal ArticleDOI
Electrical properties of grain boundaries in polycrystalline compound semiconductors
Felix Greuter,Gianni Blatter +1 more
TL;DR: In this article, the authors describe both the origin and the consequences of the charge capturing at grain boundaries, where they summarise the present knowledge on the interface microstructure and its electrical properties.
Journal ArticleDOI
Schottky barrier and pn-junction I/V plots — Small signal evaluation
TL;DR: In this paper, the authors proposed and examined three different plots for the determination of the saturation current, the ideality factor, and the series resistance of Schottky diodes and solar cells from the measurement of a single current (I)/voltage (V) curve.
Journal ArticleDOI
Frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes
P. Chattopadhyay,B. RayChaudhuri +1 more
TL;DR: In this paper, the frequency dependence of forward capacitance-voltage characteristics of Schottky barrier diodes were investigated by considering the series resistance effect, and the peak value of the capacitance was found to vary with series resistance, interface state density and the frequency of the a.c. signal.
Journal ArticleDOI
Origin of the excess capacitance at intimate Schottky contacts.
TL;DR: Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as previously thought.
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