Journal ArticleDOI
Investigation of the transition from tunneling to impact ionization multiplication in silicon p-n junctions☆
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TLDR
In this paper, a multiplication onset model and alternate schemes for calculating the DC multiplication and noise in low breakdown voltage diodes are developed, and the threshold energies for ionization depend slightly on junction widths.Abstract:
White noise spectra of diodes breaking down between 1·5 and 5 V have been used to investigate the details of the transition from tunneling to avalanche breakdown in silicon p-n junctions. It is found that the transition and carrier multiplication in these junctions is dominated by the influence of the threshold energies for ionization. Because this influence is not explicitly taken into account in the existing theories of carrier multiplication and noise, they are not applicable to low breakdown voltage diodes. Consequently, a multiplication onset model and alternate schemes for calculating the DC multiplication and noise in low breakdown voltage diodes are developed.
Analysis of the noise data indicates that the threshold energies for ionization depend slightly on junction widths and, for the diodes employed in this study, range between 1·66–1·9 eV for electrons and 1·79–2·04 eV for holes. The minimum distance between ionizing collisions is found to range from 190 to 240 A for electrons and 200 to 250 A for holes.
Application of the threshold energies for ionization to the multiplication onset model permits evaluation of the doping densities on both sides of the step junctions. From it, it is determined that the solubility of aluminum in silicon is NA = 9·5 ± 0·5 × 1018 cm−3.read more
Citations
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Journal ArticleDOI
A Monte Carlo investigation of multiplication noise in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes
TL;DR: In this article, a Monte Carlo (MC) model was used to estimate the excess noise factor in thin p/sup +/-i-n/sup +/ GaAs avalanche photodiodes (APD's).
Journal ArticleDOI
Theory of carrier multiplication and noise in avalanche devices—Part II: Two-carrier processes
TL;DR: In this paper, it was shown that the standard theories of avalanche statistics for two-carrier impact ionization by Tager, McIntyre, and Personick only deal with processes for which the number of possible ionizations is very large.
Book ChapterDOI
Noise in Solid State Devices
A. van der Ziel,E.R. Chenette +1 more
TL;DR: In this paper, the authors present a survey of noise in solid-state devices, including thermal noise, shot noise, generation-recombination (g-r) noise, and flicker noise.
Journal ArticleDOI
Mean gain of avalanche photodiodes in a dead space model
TL;DR: In this paper, the authors derived approximate analytical expressions for the mean gain of avalanche photodiodes accounting for dead space effects, which are similar to the popular formula first obtained in local approximation, provided that the ionization coefficients, /spl alpha/ and /spl beta/, are replaced with suitable effective ionisation coefficients depending on dead space.
Journal ArticleDOI
Advances in high rate sputtering with magnetron-plasmatron processing and instrumentation
TL;DR: The state of the art in metal sputtering can be found in this article, where the authors discuss approaches to and results obtained with reactive high rate d.c. sputtering and give a summary of the equipment used in this field.
References
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Journal ArticleDOI
Multiplication noise in uniform avalanche diodes
TL;DR: In this article, the spectral density of the noise generated in a uniformly multiplying p-n junction can be derived for any distribution of injected carriers, and the analysis is limited to the white noise spectrum only, and to diodes having large potential drops across the multiplying region of the depletion layer.
Journal ArticleDOI
Problems related to p-n junctions in silicon
TL;DR: In this article, a simplified model of secondary ionization, avalanche breakdown and microplasma phenomena in p-n junctions was proposed, in which holes and electrons have identical properties described by four constants: generation of highest energy or Raman phonons, energy E R and mean-free-path L R ; ionization or electron-hole pair production, threshold carrier energy E i and mean free path L i.
Journal ArticleDOI
Measurement of the ionization rates in diffused silicon p-n junctions
R. van Overstraeten,H. de Man +1 more
TL;DR: In this paper, an improved method is presented for calculating the ionization rates αn and αp from charge multiplication measurements on diffused silicon p-n junctions, where the real impurity profile is approximated by an exponential function whose parameters are calculated from capacitance measurements; the ratio αp/αn as a function of the electric field is calculated from multiplication measurements.
Journal ArticleDOI
The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
TL;DR: In this paper, the authors derived the probability that a pulse initiated by n electrons in a uniformly multiplying semiconductor diode will result in a total number of electrons (or holes) m, to give a gain m/n, and for the probability Q n,m} that the gain will be m/m or greater.
Journal ArticleDOI
Ionization Rates of Holes and Electrons in Silicon
TL;DR: In this article, the ionization rates of charge carriers in silicon have been measured and fit to the recent theoretical calculations of Baraff; in contrast, none of the existing published data could fit to these theoretical curves.