Journal ArticleDOI
Low-temperature silicon wafer bonding
H.J. Quenzer,W. Benecke +1 more
TLDR
In this article, a modified process for silicon direct bonding is described, where thin intermediate sodium silicate layers are used to decrease the process temperatures and the attraction force of the hydrophilic surfaces results in very close contact and the two wafers are fixed together.Abstract:
This paper is focused on a modified process for silicon direct bonding. Thin intermediate sodium silicate layers are used to decrease the process temperatures. Oxidized silicon wafers are used for the characterization of the process. After a hydrophilic pretreatment, a diluted solution of sodium silicate in water is spun onto one of the two surfaces and the two wafers are brought into contact. The attraction force of the hydrophilic surfaces results in very close contact and the two wafers are fixed together. After a final temperature treatment in the range 200–300 °C, a surface energy of about 3 J/m2 can be measured. In comparison, this value is obtained in conventional silicon direct bonding at temperatures above 1000 °C. The influence of chemical and temperature treatments on the surface energies is described in detail.read more
Citations
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Journal ArticleDOI
Plasma-assisted InP-to-Si low temperature wafer bonding
Donato Pasquariello,Klas Hjort +1 more
TL;DR: In this paper, the applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InPbased optoelectronic devices on Si.
Journal ArticleDOI
Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature
TL;DR: In this article, low-temperature wafer-to-wafer bonding and throughwafer interconnect Au/Si eutectic bonding has been investigated as it can conveniently be combined with bulk-micromachined through-wire interconnect, provided that the processes involved comply with the constraints imposed by the proper operation of active electrical and micromechanical subsystems.
Journal ArticleDOI
Prolog to Wafer Direct Bonding: From Advance Substrate Engineering to Future Applications in Micro/Nanoelectronics
TL;DR: In this article, the authors describe the prerequisites for the wafer-bonding process to occur and the methods to prepare the suitable surfaces for wafer bonding, and the characterization techniques to assess the quality of the bonded interfaces and to measure the bonding energy are presented.
Journal ArticleDOI
Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond
TL;DR: In this article, the authors proposed that the actual bonding is initiated by the dissolution of the oxide layer by silicidation of the titanium adhesion/barrier layer, which enables the formation of the euteetic phase.
Journal ArticleDOI
A low-temperature wafer bonding technique using patternable materials
TL;DR: In this article, photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers, and the results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm−2 (20.6 MPa).
References
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Journal ArticleDOI
Bonding of silicon wafers for silicon‐on‐insulator
TL;DR: In this paper, the surface energy of a silicon-on-insulator was evaluated based on crack propagation theory, and it was found that the bond strength increased with the bonding temperature from about 60-85 erg/cm2 at room temperature to ≂2200 erg/ cm2 at 1400°C.
Journal ArticleDOI
Field Assisted Glass‐Metal Sealing
TL;DR: In this paper, a new process is described which permits the sealing of metals to glass and other insulators at temperatures well below the softening point of the glass, by applying a dc voltage in excess of a few hundred volts between the glass and the metal in such a way that the former is at a negative potential with respect to the latter.
Journal ArticleDOI
A Model for the Silicon Wafer Bonding Process
TL;DR: In this article, the bonding speed of silicon and fused quartz wafers is measured as a function of temperature, and it is shown that the bonding process stops to operate at temperatures above 90°C and 320°C for fused quartz and bare silicon, respectively.
Proceedings ArticleDOI
Silicon-on-insulator (SOI) by bonding and ETCH-back
TL;DR: A silicon wafer bonding process is described in this paper, in which only thermally grown oxide is present between wafer pairs, and it is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Journal ArticleDOI
Wafer bonding: Investigation and in situ observation of the bond process
TL;DR: In this article, direct bonding of two oxidized wafers at room temperature and subsequent annealing is the basic process, which allows buried oxide layers to be fabricated, and additional doping or shallow epitaxial deposition permits the introduction of several etch-stop levels.