S
Scott R. Stiffler
Researcher at IBM
Publications - 36
Citations - 1020
Scott R. Stiffler is an academic researcher from IBM. The author has contributed to research in topics: Layer (electronics) & Capacitor. The author has an hindex of 18, co-authored 36 publications receiving 985 citations.
Papers
More filters
Proceedings ArticleDOI
High performance 14nm SOI FinFET CMOS technology with 0.0174µm 2 embedded DRAM and 15 levels of Cu metallization
C-H. Lin,Brian J. Greene,Shreesh Narasimha,J. Cai,A. Bryant,Carl J. Radens,Vijay Narayanan,Barry Linder,Herbert L. Ho,A. Aiyar,E. Alptekin,J-J. An,Michael V. Aquilino,Ruqiang Bao,V. Basker,Nicolas Breil,MaryJane Brodsky,William Y. Chang,Clevenger Leigh Anne H,Dureseti Chidambarrao,Cathryn Christiansen,D. Conklin,C. DeWan,H. Dong,L. Economikos,Bernard A. Engel,Sunfei Fang,D. Ferrer,A. Friedman,Allen H. Gabor,Fernando Guarin,Ximeng Guan,M. Hasanuzzaman,J. Hong,D. Hoyos,Basanth Jagannathan,S. Jain,S.-J. Jeng,J. Johnson,B. Kannan,Y. Ke,Babar A. Khan,Byeong Y. Kim,Siyuranga O. Koswatta,Amit Kumar,T. Kwon,Unoh Kwon,L. Lanzerotti,H-K Lee,W-H. Lee,A. Levesque,Wai-kin Li,Zhengwen Li,Wei Liu,S. Mahajan,Kevin McStay,Hasan M. Nayfeh,W. Nicoll,G. Northrop,A. Ogino,Chengwen Pei,S. Polvino,Ravikumar Ramachandran,Z. Ren,Robert R. Robison,Saraf Iqbal Rashid,Viraj Y. Sardesai,S. Saudari,Dominic J. Schepis,Christopher D. Sheraw,Shariq Siddiqui,Liyang Song,Kenneth J. Stein,C. Tran,Henry K. Utomo,Reinaldo A. Vega,Geng Wang,Han Wang,W. Wang,X. Wang,D. Wehelle-Gamage,E. Woodard,Yongan Xu,Y. Yang,N. Zhan,Kai Zhao,C. Zhu,K. Boyd,E. Engbrecht,K. Henson,E. Kaste,Siddarth A. Krishnan,Edward P. Maciejewski,Huiling Shang,Noah Zamdmer,R. Divakaruni,J. Rice,Scott R. Stiffler,Paul D. Agnello +98 more
TL;DR: In this article, the authors present a fully integrated 14nm CMOS technology featuring fin-FET architecture on an SOI substrate for a diverse set of SoC applications including HP server microprocessors and LP ASICs.
Proceedings ArticleDOI
Silicon-on-insulator (SOI) by bonding and ETCH-back
TL;DR: A silicon wafer bonding process is described in this paper, in which only thermally grown oxide is present between wafer pairs, and it is proposed the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Patent
Silicon-on-insulator vertical array device trench capacitor DRAM
Carl J. Radens,Gary B. Bronner,Tze-Chiang Chen,Bijan Davari,Jack A. Mandelman,Dan Moy,Devendra K. Sadana,Ghavam G. Shahidi,Scott R. Stiffler +8 more
TL;DR: In this article, the authors describe a DRAM cell with a trench storage capacitor connected by a self-aligned buried strap to a vertical access transistor, which is used to isolate and define cells.
Patent
Method of producing a thin silicon-on-insulator layer
John Robert Abernathey,Jerome B. Lasky,Larry Alan Nesbit,Thomas O. Sedgwick,Scott R. Stiffler +4 more
TL;DR: In this paper, an epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into this layer in order to form a buried etch-stop layer therein.
Patent
Isolation technique for silicon germanium devices
TL;DR: In this article, the authors proposed an isolation structure for use with FET or bipolar devices incorporating a silicon-germanium layer in which the semiconductor devices are isolated by trench structures.