Magnetocapacitance of an electrically tunable silicene device

TLDR: In this paper, the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field was investigated and the interplay of spin orbit interaction and the perpendicular electric field was clarified.

Abstract: Despite their structural similarity, the electronic properties of silicene are fundamentally different from those of well-known graphene due to the strong intrinsic spin orbit interaction and buckled structure of silicene. We address the magnetocapacitance of spin and valley polarized silicene in an external perpendicular magnetic field to clarify the interplay of the spin orbit interaction and the perpendicular electric field. We find that the band gap is electrically tunable and show that the magnetocapacitance exhibits beating at low and splitting of the Shubnikov de Haas oscillations at high magnetic field.

Figures

FIG. 4. Total magnetocapacitance of the K and K0 valleys as a function of the magentic field for SOI energy k ¼ 4 meV and electric field energy D ¼ 8 meV (black) and D ¼ 15 meV (red).

FIG. 3. Total magnetocapacitance of the K and K0 valleys as a function of the Fermi energy for B¼ 1 T, SOI energy k ¼ 4 meV, and electric field energy D ¼ 8 meV (black) and D ¼ 4 meV (red).

FIG. 2. Magnetocapacitance as a function of the Fermi energy for B¼ 1 T, SOI energy k ¼ 4 meV, and electric field energy D ¼ 8 meV. Red/black color represents the K=K0 valley.

FIG. 1. Crystal structure of silicene. The black and red spheres represent the two sublattices. The directions of the electric and magnetic fields are indicated by arrows.