Journal ArticleDOI
Mechanism of high selectivity in ceria based shallow trench isolation chemical mechanical polishing slurries
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TLDR
In this article, the effect of downward pressure, rotational speed of the turntable as well as the ceria abrasive loading on the selectivity of a shallow trench isolation chemical mechanical polishing slurries was investigated over a pH range.About:
This article is published in Thin Solid Films.The article was published on 2010-08-02. It has received 11 citations till now. The article focuses on the topics: Chemical-mechanical planarization & Selectivity.read more
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Journal ArticleDOI
Shallow Trench Isolation Chemical Mechanical Planarization: A Review
TL;DR: In this paper, a review of high selectivity shallow trench isolation (STI) CMP slurries is presented along with the characteristics of the colloidal dispersions like the abrasives, additives, the interactions between them and with the films being planarized and the associated pH range in which the high selectivities are observed.
Journal ArticleDOI
The role of interactions between abrasive particles and the substrate surface in chemical-mechanical planarization of Si-face 6H-SiC
TL;DR: In this article, the influence of interactions between silica or ceria nanoparticles and the substrate surface on the CMP of Si-face (0001) 6H-SiC in different slurries with varied pH values was investigated using zeta potential measurements, SEM observations, friction tests, polishing experiments and XPS analysis.
Journal ArticleDOI
Role of hydrogen bonding on the adsorption of several amino acids on SiO2 and Si3N4 and selective polishing of these materials using ceria dispersions
Naresh Kumar Penta,B. Peethala,H. P. Amanapu,Artem Melman,Suryadevara V. Babu,Suryadevara V. Babu +5 more
TL;DR: In this article, the adsorption of two amino acids, picolinic acid and proline, on SiO2 and Si3N4 surfaces was investigated using thermogravimetry and differential measurements which identified the formation of peptides activated by the hydrogen bonding.
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Silicon Nitride Film Removal During Chemical Mechanical Polishing Using Ceria-Based Dispersions
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Effect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolation
TL;DR: In this paper, two different ceria abrasives were evaluated in order to identify the nature of interaction between the additives and the abrasives, and the results showed that the extent of adsorption of glycine or proline on ceria depends on the presence of La doping.
References
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Book
Principles of Biochemistry
TL;DR: The third edition, coming ten years after the first, emphasizes both the flowering of biochemical research and the prodigious effort by busy teachers and scientists to keep up to date this popular text and reference.
Journal ArticleDOI
Chemical processes in glass polishing
TL;DR: In this article, a detailed mechanico-chemical model for the glass polishing process is proposed, and the central chemical process which occurs is the interaction of both the glass surface and the polishing particle with water.
Book
Chemical Mechanical Planarization of Microelectronic Materials
TL;DR: In this article, historical perspective CMP: variables and manipulations electrochemical and mechanical concepts for CMP processes copper CMP CMP of other materials post CMP cleaning, and a discussion of the relationship between CMP and manipulation.
BookDOI
Chemical-mechanical planarization of semiconductor materials
TL;DR: In this paper, the authors present a detailed overview of CMP technology and its application in metal CMP processes, as well as equipment used in CMP process and tools used to clean CMP slurry.
Journal ArticleDOI
Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing
Howard S. Landis,Peter J Burke,William J. Cote,William R. Hill,Cheryl A. Hoffman,Carter Welling Kaanta,Charles W. Koburger,Walter Frederick Lange,Micheal Leach,Stephen E. Luce +9 more
TL;DR: The use of chemical-mechanical polishing (CMP) has been exploited by IBM in the development and manufacture of CMOS products since 1985 as mentioned in this paper and has been used in the planarization of oxide shallow isolation trenches, as in the 16-Mbit DRAM.