Journal ArticleDOI
Microscopic simulation of RF noise in junctionless nanowire transistors
Maziar Noei,Christoph Jungemann +1 more
TLDR
In this article, a deterministic solver for the analysis of microscopic noise and small-signal fluctuations in junctionless nanowire field effect transistors is presented, which is based on a selfconsistent and simultaneous solution of the Poisson/Schrodinger/Boltzmann equations.Abstract:
A deterministic solver for the analysis of microscopic noise and small-signal fluctuations in junctionless nanowire field-effect transistors is presented, which is based on a self-consistent and simultaneous solution of the Poisson/Schrodinger/Boltzmann equations. It is verified that the numerical framework fulfills the vital properties of reciprocity and passivity in the small-signal sense, and yields Johnson–Nyquist noise under equilibrium conditions. Key figures such as the cutoff frequency, drain excess noise factor, the Fano factor, and gate/drain correlation coefficient are presented at various bias conditions. In this work we show that similar to the inversion-mode MOSFETs, the gate and drain current noises mainly stem from the warm electrons at the source side, whereas the hot electrons do not have a significant contribution. Also, our results show that the device behaves similar to long-channel FETs in terms of its excess noise even for a channel length of 10 nm, due to the strong control of its electrostatics by the all-around gate.read more
Citations
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Journal ArticleDOI
A numerical approach to quasi-ballistic transport and plasma oscillations in junctionless nanowire transistors
TL;DR: In this article, a numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the selfconsistent solution of the Poisson, Schrodinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering.
Journal ArticleDOI
A Godunov-Type Stabilization Scheme for Large-Signal Simulations of a THz Nanowire Transistor Based on the Boltzmann Equation
TL;DR: In this article, a stabilization method is presented for the Boltzmann equation (BE) that is based on Godunov's approach applied directly in the phase space, which makes it possible to perform transient simulations under quasiballistic conditions and to include the Pauli principle in the scattering integral without further approximations.
Journal ArticleDOI
RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver
Maziar Noei,Christoph Jungemann +1 more
TL;DR: In this article, the authors report the ac and noise characteristics of junctionless nanowire field effect transistor (JN-FET) with different gate lengths and show that due to the improved electrostatic control and better immunity to short-channel effects, several key quantities such as the drain/gate excess noise factors and correlation coefficient demonstrate classical long-channel behavior for channel lengths as small as 16nm.
References
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Electronic properties of two-dimensional systems
TL;DR: In this paper, the electronic properties of inversion and accumulation layers at semiconductor-insulator interfaces and of other systems that exhibit two-dimensional or quasi-two-dimensional behavior, such as electrons in semiconductor heterojunctions and superlattices and on liquid helium, are reviewed.
Journal ArticleDOI
Junctionless multigate field-effect transistor
Chi-Woo Lee,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Jean-Pierre Colinge +5 more
TL;DR: In this article, the authors describe a metaloxide-semiconductor MOS transistor concept in which there are no junctions and the channel doping is equal in concentration and type to the source and drain extension doping.
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Electronic noise and fluctuations in solids
TL;DR: A comprehensive and complete review of flicker (1/f) noise in the literature can be found in this paper, focusing on the physics of electronic fluctuations (noise) in solids.
Journal ArticleDOI
Junctionless nanowire transistor (JNT): Properties and design guidelines
Abhinav Kranti,Ran Yan,Chi-Woo Lee,Isabelle Ferain,Ran Yu,N. Dehdashti Akhavan,Pedram Razavi,Jean-Pierre Colinge +7 more
TL;DR: In this article, a junctionless nanowire transistors (gated resistors) are compared to inversion-mode and accumulation-mode MOS devices using bulk conduction instead of surface channel.
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Density-Matrix-Based Algorithm for Solving Eigenvalue Problems
TL;DR: A new numerical algorithm for solving the symmetric eigenvalue problem is presented, which takes its inspiration from the contour integration and density matrix representation in quantum mechanics.
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