Journal ArticleDOI
Multibarrier tunneling in Ga1−xAlxAs/GaAs heterostructures
TLDR
In this article, a theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented, where the spectrum of the resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from currentvoltage characteristics computed at selected temperatures and Fermi levels.Abstract:
A theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current–voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation as done to date, but contains three significant improvements: a more realistic treatment of the spatial dependence of effective masses and band edges; the recognition of the special dynamical role played by the transverse energy as a consequence of the difference in itinerant two dimensional carrier motion from layer to layer; and the avoidance of plane‐wave or WKB approximations for calculating the wave function in favor of direct numerical evaluation. It is shown that these revisions lead to quantitative differences with results of previous work.read more
Citations
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Journal ArticleDOI
Negative differential resistance in a strained-layer quantum-well structure with a bound state
TL;DR: In this paper, the energy spectrum of the unbiased structure includes the usual resonant states and also bound states due to the narrowband gap InGaAs as well as strong tunneling and negative differential resistance are observed for the resonant state.
Proceedings ArticleDOI
The origin of the temperature dependence in resonant tunneling transport
TL;DR: In this paper, the temperature dependence of transport in resonant tunneling devices is studied theoretically and compared with experiments and the most contributions come from the one-dimensional carrier energy distribution factor, the position of the Fermi energy, and the temperature dependences of some physical parameters.
Journal ArticleDOI
Lifetime of resonant state in a spherical quantum dot
Li Chun-Lei,Xiao Jing-Lin +1 more
TL;DR: In this article, the lifetime of resonant state and transmission probability of a single electron tunnelling in a spherical quantum dot (SQD) structure by using the transfer matrix technique was calculated.
Journal ArticleDOI
外场中多势垒结构的电导的计算 Calculation of Conductance for Multi-Barrier Structure in a Constant Electric Field
TL;DR: In this article, the current density expression and the unit area conductance for one-dimensional multi-barrier structure in the presence of a constant electric field were derived for a selected range of parameters of semiconductor materials (GaAs/GaxAl1-xAs).
Journal ArticleDOI
Spin-dependent current in resonant tunneling diode with ferromagnetic GaMnN layers
TL;DR: In this paper, the spin splitting peaks were observed at low temperature in a double barrier resonant tunneling diode (RTD) with ferromagnetic GaMnN emitter/collector.
References
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Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Book
Mathematical methods for digital computers
TL;DR: This is the book that many people in the world waiting for to publish, mathematical methods for digital computers, and the book lovers are really curious to see how this book is actually.
Journal ArticleDOI
Superlattice band structure in the envelope-function approximation
TL;DR: In this paper, the band structure of GaAs-GaAlAs and InAsGaSb superlattices is calculated by matching propagating or evanescent envelope functions at the boundary of consecutive layers.
Journal ArticleDOI
Space-Charge Effects on Electron Tunneling
D. J. BenDaniel,C. B. Duke +1 more
TL;DR: In this article, the one-electron (Bethe-Sommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass and centroid of the oneelectron constant energy surfaces vary across the junction.
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