Journal ArticleDOI
Multibarrier tunneling in Ga1−xAlxAs/GaAs heterostructures
TLDR
In this article, a theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented, where the spectrum of the resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from currentvoltage characteristics computed at selected temperatures and Fermi levels.Abstract:
A theoretical study of resonant tunneling in multilayered Ga1−xAlxAs/GaAs structures is presented. The spectrum of resonant energies and its dependence on the barrier structure are analyzed from calculated profiles of barrier transparency versus energy, and from current–voltage characteristics computed at selected temperatures and Fermi levels. The present formalism is based on the effective mass approximation as done to date, but contains three significant improvements: a more realistic treatment of the spatial dependence of effective masses and band edges; the recognition of the special dynamical role played by the transverse energy as a consequence of the difference in itinerant two dimensional carrier motion from layer to layer; and the avoidance of plane‐wave or WKB approximations for calculating the wave function in favor of direct numerical evaluation. It is shown that these revisions lead to quantitative differences with results of previous work.read more
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Semiconductor Spintronics
TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
Journal ArticleDOI
Waves in locally periodic media
TL;DR: In this paper, the theory of wave propagation in one dimension through a medium consisting of N identical "cells" is reviewed, and exact closed-form results can be obtained for arbitrary N. As N increases, the band structure characteristic of waves in infinite periodic media emerges.
Journal ArticleDOI
Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature
TL;DR: In this article, the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs−AlxGa1−xAs ‐GaAs•Alx Ga1 −xAs −x As−GaAs structure at room temperature was reported.
Journal ArticleDOI
Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approach
TL;DR: In this paper, a theoretical study of resonant tunneling in multilayered heterostructures is presented based on an exact solution of the Schroedinger equation under the application of a constant electric field.
Journal ArticleDOI
Importance of space-charge effects in resonant tunneling devices
TL;DR: In this paper, the authors consider space charge effects in the analysis of resonant tunneling devices and propose a modification of the currentvoltage relationship, where the region of negative differential resistance (NDR) is shifted to a higher voltage, and broadened along the voltage axis.
References
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Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Book
Mathematical methods for digital computers
TL;DR: This is the book that many people in the world waiting for to publish, mathematical methods for digital computers, and the book lovers are really curious to see how this book is actually.
Journal ArticleDOI
Superlattice band structure in the envelope-function approximation
TL;DR: In this paper, the band structure of GaAs-GaAlAs and InAsGaSb superlattices is calculated by matching propagating or evanescent envelope functions at the boundary of consecutive layers.
Journal ArticleDOI
Space-Charge Effects on Electron Tunneling
D. J. BenDaniel,C. B. Duke +1 more
TL;DR: In this article, the one-electron (Bethe-Sommerfeld) model of electron tunneling is formulated to describe tunneling when the curvature (electron mass and centroid of the oneelectron constant energy surfaces vary across the junction.
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