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Observation of near‐band‐gap luminescence from boron nitride films

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TLDR
In this paper, cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion-source-assisted magnetron sputtering of a hexagonal BN target is presented.
Abstract
We report results from cathodoluminescence spectroscopy of boron nitride films grown on Si(100) substrates by ion‐source‐assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near‐band‐gap region for hexagonal boron nitride films at energies of 4.90, 5.31, and 5.50 eV. We also report deep‐level emission spectra of predominantly cubic boron nitride films which are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

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Journal ArticleDOI

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.

TL;DR: HBN is shown to be a promising material for compact ultraviolet laser devices because it has a direct bandgap in the ultraviolet region and evidence for room-temperature ultraviolet lasing at 215 nm by accelerated electron excitation is provided.
Journal ArticleDOI

Structural and electronic properties of h-BN

TL;DR: In this article, the effects of stacking behavior of hexagonal basal layers to the structural stability and electronic properties of h-BN were investigated thoroughly using first-principles calculations based on the density-functional theory local density approximation.
Journal ArticleDOI

Bright UV Single Photon Emission at Point Defects in h-BN.

TL;DR: This work identifies a new extremely bright UV single photon emitter in hexagonal boron nitride by employing an original experimental setup coupling cathodoluminescence within a scanning transmission electron microscope to a Hanbury-Brown-Twiss intensity interferometer.
Journal ArticleDOI

Optical Properties of (Oxy)Nitride Materials: A Review

TL;DR: In this paper, the optical properties of (Oxy)nitride materials, including refractive index, reflectance, absorbance, band gap, photoluminescence, and transmittance, are discussed.
Journal ArticleDOI

The physical and chemical properties of heteronanotubes

TL;DR: Theoretical concepts and experimental achievements ranging from carbon nanotubes with low B or N doping to the new physics behind boron nitride nanotsubes are covered in this paper.
References
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Journal ArticleDOI

Normal Modes in Hexagonal Boron Nitride

TL;DR: In this article, a Kramers-Kronig analysis and a classical oscillator fit were used to analyze the reflection spectra of pyrolytic boron nitride in reflection and transmission.
Journal ArticleDOI

Optical properties of hexagonal boron nitride

TL;DR: In this paper, self-consistent tight-binding bandstructure calculations were performed on a two-dimensional hexagonal crystal model, using Hamiltonian matrix elements calculated by semi-empirical LCAO (linear combination of atomic orbitals) methods.
Journal ArticleDOI

Lattice Infrared Spectra of Boron Nitride and Boron Monophosphide

TL;DR: In this paper, the infrared reflection spectrum of cubic boron nitride from 80 to 550 GHz was obtained with a beam condenser. Butler et al. showed that the absorption peaks were observed between 600 and 3000 GHz and assigned as combinations of four Brillouin-zone boundary modes: LO 1232, TO 1000, LA 685, TA 348 and TA 348.
Journal ArticleDOI

Optical properties of pyrolytic boron nitride in the energy range 0.05—10 eV

TL;DR: In this paper, a Kramers-Kronig analysis was performed to determine the in-plane real and imaginary dielectric functions of pyrolytic boron nitride.
Journal ArticleDOI

Phase evolution in boron nitride thin films

TL;DR: In this paper, the effect of film thickness on the resultant BN phase was investigated using Fourier transform infrared (FTIR) spectroscopy and high resolution transmission electron microscopy (HRTEM).
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