Journal ArticleDOI
Optical absorption in Hg1−xCdxTe
TLDR
In this paper, the theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited, and an analytical expression for the linear absorption coefficient in narrow-gap ICs is obtained by including the nonparabolic band structure due to Keldysh [Sov. Phys. 6, 763 (1958)] and Burstein-Moss shift.Abstract:
The theory of optical absorption due to interband transitions in direct-gap semiconductors is revisited. An analytical expression for the linear absorption coefficient in narrow-gap semiconductors is obtained by including the nonparabolic band structure due to Keldysh [Sov. Phys.–JETP 6, 763 (1958)] and Burstein–Moss shift. Numerical results are obtained for Hg1−xCdxTe for several values of x and temperature, and compared with recent experimental data. The agreement is found to be good.read more
Citations
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Progress in the room-temperature optical functions of semiconductors
TL;DR: In this paper, an overview of the experimental methods for the determination of optical functions in the 1-6-eV spectral range and the available models for calculating the optical functions is given.
Journal ArticleDOI
Modeling of Recombination in HgCdTe
TL;DR: In this article, the authors used a 14-band k-p formalism to compute and optimize electronic band structures, and used the obtained electronic energies and matrix elements directly in the numerical evaluation of Auger and radiative lifetimes.
Journal ArticleDOI
Time-resolved dynamics of coherent acoustic phonons in CdMnTe diluted-magnetic single crystals
TL;DR: In this article, the authors reported on observed pronounced coherent acoustic phonon (CAP) oscillations in diluted-magnetic Cd1−xMnxTe (x=0.09) single crystals by means of femtosecond, optical single-color, and two-color pump-probe spectroscopy.
Journal ArticleDOI
A study of galvanomagnetic phenomena in MBE-grown n-Cd x Hg 1-x Te films
TL;DR: The magnetic field dependences of the Hall coefficient and the conductivity of n-type CdxHg1−xTe epitaxial structures were measured at 77 K.
Journal ArticleDOI
Challenges in multiphysics modeling of dual-band HgCdTe infrared detectors
Marco Vallone,Michele Goano,Alberto Tibaldi,Stefan Hanna,D. Eich,Alexander Sieck,H. Figgemeier,Giovanni Ghione,Francesco Bertazzi +8 more
TL;DR: Three-dimensional simulations of HgCdTe-based focal plane arrays (FPAs) with two-color and dual-band sequential infrared pixels having realistic truncated-pyramid shape are presented, taking into account also the presence of compositionally graded transition layers.
References
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Journal ArticleDOI
Band structure of indium antimonide
TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
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Zener tunneling in semiconductors
TL;DR: In this paper, the Zener current in a constant field is calculated both with and without the W annier -A dams reduction of the interband-coupling terms, interpreted as a polarization correction.
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Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆
TL;DR: In this paper, the Burstein-Moss shift of the absorption edge was derived for the absorption constant of Pb 1− x Sn x Te (LTT) and Hg 1−x Cd x,Te (HCT) in terms of the k−p band structure parameters appropriate to the two alloy systems.
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Reststrahlen spectra of HgTe and CdxHg1-xTe
TL;DR: RefReflection spectra of CdxHg1-xTe single crystals with 0 ≤ x ≤ 0.54 were measured in the spectral region from 1000 cm −1 to 25 cm−1 at 77 K and 300 K as discussed by the authors.