Journal ArticleDOI
Optical bistability at 980 nm in a strained InGaAs/GaAs multiple quantum well microcavity with resonant periodic nonlinearity
TLDR
In this paper, a novel monolithic all-optical bistable device operating at 980 nm was reported, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field.Abstract:
We report on a novel monolithic all‐optical bistable device operating at 980 nm, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field. This design maximizes the interaction with the intracavity field and allowed to use only twelve quantum wells of 10 nm thickness. The first observation of all‐optical bistability with strained InGaAs/GaAs quantum wells is reported, with a contrast ratio of 7:1 and a threshold intensity of 1 kW/cm2. The operating wavelength offers key advantages such as the substrate transparency and compatibility with vertical cavity surface emitting lasers.read more
Citations
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Journal ArticleDOI
Resonant optical nonlinearities in semiconductors
TL;DR: A review of nonlinear optics in semiconductors can be found in this article, where the focus is on nonlinear absorption and the refractive index that arises from the photo-induced excitation of free carriers.
Journal ArticleDOI
Optical bistability in a three-level semiconductor quantum-well system
Amitabh Joshi,Min Xiao +1 more
TL;DR: In this paper, a three-level ladder-type system with similar transition energies has been studied and the system interacts with a strong driving field which is in two-photon resonance with the intersubband transition and thus simultaneously drives all three levels into phase-locked quantum coherence.
Journal ArticleDOI
Analysis of optical nonlinearity by defect states in one-dimensional photonic crystals
TL;DR: In this paper, a large enhancement of optical nonlinearity in one-dimensional photonic-crystal structures with a defect is considered theoretically, and it is shown that the enhancement can be obtained for absorption saturation and degenerate four-wave mixing efficiency as a result of large optical field amplitude of the localized photonic defect mode at the defect layer.
Journal ArticleDOI
Ultrahigh finesse microcavity with distributed Bragg reflectors
TL;DR: In this article, a very high finesse microcavity using distributed Bragg reflectors of AlxGa1−xAs and AlAs was grown using the measured Fabry-Perot mode with a linewidth of 0.84 A at 930 nm.
Journal ArticleDOI
Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength
TL;DR: In this article, a GaAs-AlAs Bragg reflector and a nonlinear medium grown on InP are bonded through wafer-fusion, leading to a high-quality vertical cavity after deposition of a top dielectric mirror.
References
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Journal ArticleDOI
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
TL;DR: In this paper, the authors have designed, fabricated, and tested vertical-cavity surface-emitting laser (VCSEL) with diameters ranging from 0.5 mu m to>50 mu m.
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Correction to "Reduction of lasing threshold current density by the lowering of valence band effective mass"
Eli Yablonovitch,E.O. Kane +1 more
TL;DR: In this paper, a combination of strain and quantum confinement is proposed to reduce the valence band effective mass and to lessen the laser threshold requirements, which results in a significant penalty in terms of threshold current density, carrier injection level, and excess Auger and other nonradiative recombination.
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Design of Fabry-Perot surface-emitting lasers with a periodic gain structure
TL;DR: A detailed analysis of a Fabry-Perot surface emitting laser (FP-SEL) which utilizes the recently proposed concept of periodic gain is presented in this paper, where it is shown that close to a factor-of-two reduction in threshold current should be possible; the ideal reduction of a factor of two is only limited by the internal loss of the cavity.
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Variation of the critical layer thickness with In content in strained InxGa1−xAs‐GaAs quantum wells grown by molecular beam epitaxy
TL;DR: In this paper, the critical width for misfit dislocation generation was determined for molecular beam epitaxy grown strained InxGa1−xAs (0.1