Origin of Yellow-Band Emission in Epitaxially Grown GaN Nanowire Arrays

TLDR: The idea using buffering/barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.

Abstract: Here, we report the origin of the yellow-band emission in epitaxial GaN nanowire arrays grown under carbon-free conditions. GaN nanowires directly grown on [0001]-oriented sapphire substrate exhibit an obvious and broad yellow-band in the visible range 400–800 nm, whereas the insertion of Al/Au layers in GaN–sapphire interface significantly depresses the visible emission, and only a sharp peak in the UV range (369 nm) can be observed. The persuasive differences in cathodoluminescence provide direct evidence for demonstrating that the origin of the yellow-band emission in GaN nanowire arrays arises from dislocation threading. The idea using buffering/barrier layers to isolate the dislocation threading in epitaxially grown GaN nanowires can be extended to the rational synthesis and structural defect controlling of a wide range of semiconductor films and nanostructures with superior crystal quality and excellent luminescence property.