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Journal ArticleDOI

Paramagnetic and anti-ferromagnetic interactions in sol–gel derived Zn1−x Mn x O [50 MeV Li3+ irradiated (x=0.04) and unirradiated (x=0.02 and 0.04)] samples

TLDR
In this article, a study of Zn1−x Mn x O (x=0.02 and 0.04) pellets synthesized by sol-gel technique was performed to explore the inherent magnetic interactions.
Abstract
A study of Zn1−x Mn x O (x=0.02 and 0.04) pellets synthesized by sol–gel technique was performed to explore the inherent magnetic interactions. 50 MeV Li3+ ion beam irradiation was employed to a Zn0.96Mn0.04O pellet. Structural, morphological, compositional and magnetic properties of the samples were investigated. The single-phase structural nature was destroyed for a 4 at% Mn-doped sample with the formation instead of a new phase of ZnMnO3, as observed from the X-ray diffraction (XRD) pattern. The intensity of the multiphase component decreases with the ion irradiation. XRD also indicates that Mn incorporation in ZnO increased with increasing doping and, interestingly, with irradiation. The tendency of grain size is the opposite. The magnetic measurements of the samples indicate anti-ferromagnetic interactions coupled with paramagnetic counterparts. The study clearly exhibits the modification of magnetic properties with Li3+ ion beam irradiation. It has been interpreted that structural and compositional ...

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Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase

TL;DR: In this paper, structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1− x Mn x O samples were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectrography (PALS).
Journal ArticleDOI

Correlation between defect and magnetism of low energy Ar+9 implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

TL;DR: The structural, morphological, optical and magnetic properties of Ar +9 implanted 5% Mn doped ZnO films have been investigated to detect the correlation between ferromagnetism (FM) and defect as mentioned in this paper.
Posted Content

Correlation between defect and magnetism of Ar9+ implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

TL;DR: In this article, the authors have investigated the structural, morphological, optical and magnetic properties of the thin films of Zn0.95Mn 0.05O with Ar9+ ions.
Journal ArticleDOI

Structural, electronic, morphological, optical and magnetic properties of Mn0.03–xCoxZn0.97O (0 ≤ x ≤ 0.03) nanoparticles

TL;DR: In this paper, the authors synthesize nanoparticles of Mn0.03, Co0.97, X-ray absorption near edge spectroscopy indicates quite low presence of desired Mn2+ ions whereas the presence of the desired Co2+ ion is substantial.
References
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Journal ArticleDOI

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI

Absence of ferromagnetism in Co and Mn substituted polycrystalline ZnO

TL;DR: In this paper, the properties of semiconducting bulk ZnO when substituted with the magnetic transition metal ions Mn and Co, with substituent fraction ranging from 0.02$ to 0.15$, were measured as a function of magnetic field and temperature and they found no evidence for magnetic ordering in these systems down to $T=2\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.
Journal ArticleDOI

General features of latent track formation in magnetic insulators irradiated with swift heavy ions

TL;DR: A thermal spike model is proposed for the analysis of latent track formation in insulators and good agreement is found with literature data on latent tracks in magnetic insulators.
Journal ArticleDOI

Production and annealing of electron irradiation damage in ZnO

TL;DR: In this paper, the authors show that ZnO is significantly more "radiation hard" than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites.
Journal ArticleDOI

Role of defects in tailoring structural, electrical and optical properties of ZnO

TL;DR: In this paper, a brief account of the evolution of defects due to controlled changes in polycrystalline zinc oxide has been presented and a coherent scenario in the light of previous works in this field has been discussed.
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