Physical Modeling of p -Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors
Kadiyam Rajshekar,Hsiao-Hsuan Hsu,Koppolu Uma Mahendra Kumar,P. Sathyanarayanan,V. Velmurugan,Chun-Hu Cheng,D. Kannadassan +6 more
TLDR
In this paper, the dynamic response of a p-type Al-doped SnO active channel thin film transistors (TFTs) for the potential application of ultra-high definition (UHD) displays is presented.Abstract:
Fabrication, physical modeling and dynamic response of p-type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high ION/IOFF ratio of > 106, low subthreshold swing of ~100 mV/dec and high field-effect mobility (μFE) of 4.8 cm
2
V
-1
s
-1
. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnO
x
and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p-type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnO
x
TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.read more
Citations
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High-mobility flexible/transparent p-type copper iodide thin-film transistors and complementary inverters
TL;DR: In this paper , the p-channel copper iodide (CuI) thin-film transistors with a bottom-gate structure are achieved via replacing traditional SiO2 dielectric with Chitosan (CS, a kind of solid polymer electrolytes), with the threshold voltage down to −0.35 V, field effect mobility (μFE) up to 60 cm2V−1s−1 and on/off current ratio (Ion/Ioff) beyond 103.
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High-Mobility Flexible/Transparent P-Type Copper Iodide Thin-Film Transistors and Complementary Inverters
Hai Wu,Lingyan Liang,Xiaolong Wang,Xixiu Shi,Heng-bin Zhang,Yu Pei,Wanfa Li,Bo Yuan Sun,Cai Shen,Hongtao Cao +9 more
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Enhanced performance of p-type SnO <sub>x</sub> thin film transistors through defect compensation
TL;DR: In this article , the internal mechanism of vacancy defect compensation by aluminum doping in tin monoxide (SnO) x film is studied combining experiments with the density functional theory (DFT), and the doping is achieved by an argon (Ar) plasma treatment of Al 2 O 3 deposited onto the SnO x film, in which the surface passivation and Al doping source.
Posted ContentDOI
A Comprehensive Density-of-States Model for Oxide Semiconductor Thin Film Transistors
TL;DR: In this article, a comprehensive density of states model was proposed to understand the origin of conductivity and the performance of p-type and n-type oxide semiconductor thin film transistors (TFTs).
Journal ArticleDOI
Enhanced performance of p-type SnO x thin film transistors through defect compensation
TL;DR: In this paper , the internal mechanism of vacancy defect compensation by aluminum doping in tin monoxide (SnO) x film is studied combining experiments with the density functional theory (DFT), which reveals that the most possible positions of Al in SnO and SnO2 segments are the compensation to Sn vacancy and interstitial.
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