scispace - formally typeset
Journal ArticleDOI

PLASMA DIAGNOSTICS OF AN rf-SPUTTERING GLOW DISCHARGE.

J. W. Coburn, +1 more
- 15 May 1971 - 
- Vol. 18, Iss: 10, pp 435-438
Reads0
Chats0
TLDR
In this paper, the positive ions incident on the substrate plane in a planar diode discharge system were observed with an electrostatic deflection energy analyzer and a quadrupole mass spectrometer.
Abstract
The positive ions incident on the substrate plane in a planar diode discharge system are observed with an electrostatic deflection energy analyzer and a quadrupole mass spectrometer. Several targets have been rf sputtered in rare‐gas discharges and the mass spectra that are obtained indicate that the sputtered species, which leave the target predominantly as neutrals, are subsequently ionized in the discharge by Penning ionization rather than by electron‐impact ionization or other ion‐molecule reactions.

read more

Citations
More filters
Journal ArticleDOI

High power impulse magnetron sputtering discharge

TL;DR: The high power impulse magnetron sputtering (HiPIMS) discharge is a recent addition to plasma-based sputtering technology as mentioned in this paper, where high power is applied to the magnetron target in unipolar pulse.
Journal ArticleDOI

Positive‐ion bombardment of substrates in rf diode glow discharge sputtering

TL;DR: In this article, the authors measured the potential of an electrically isolated surface in an rf diode sputtering glow discharge and investigated the influence on these potentials of both the geometry enclosing the discharge volume and of a positively biased auxiliary electrode in contact with the discharge.
Journal ArticleDOI

Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment

TL;DR: In this article, an intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity.
Journal ArticleDOI

Sputtering—a review of some recent experimental and theoretical aspects

TL;DR: In this article, a brief outline of the present sputtering theory for a random solid, recent results of the sputtering yieldS for polycrystalline targets are discussed, in particular in view of the influence of the projectile mass and the bombarding angle.
References
More filters
Journal ArticleDOI

The Focusing of Charged Particles by a Spherical Condenser

TL;DR: In this article, it was shown that a group of charged particles, leaving a point on a normal to one of these boundaries and entering the condenser along this normal as a diverging bundle, will be brought to a focus at a point $Q$ lying on the line of the common center of curvature, $O$, of the equipotential surfaces.
Journal ArticleDOI

Mass spectrometric studies of molecular ions in the noble gases

TL;DR: In this article, the ion intensity increased linearly with electron current and with the square of the gas pressure, and the form of the ionization versus electron energy curves resembles closely curves of excitation probability by electron collision.
Journal ArticleDOI

Über Ionisation durch metastabile Atome

F.M. Penning
- 01 Oct 1927 - 
Journal ArticleDOI

Plasma Sheath Formation by Radio‐Frequency Fields

H. S. Butler, +1 more
- 01 Sep 1963 - 
TL;DR: In this article, it has been observed experimentally that the application of a radio-frequency voltage (10 kc/sec−50 Mc/sec) to any one of several electrode configurations around the outside of a plasma discharge tube results in a constriction of the luminous portion of the plasma away from the inner walls of the glass tube.
Related Papers (5)