Journal ArticleDOI
Plasmaless dry etching of silicon with fluorine‐containing compounds
TLDR
In this article, the gas phase halogen interhalogens are applied to pattern silicon and more generally to remove silicon or polysilicon layers without a plasma, which is an economically attractive alternative to fluorine-based plasma etching.Abstract:
Silicon is rapidly etched by the gas‐phase halogen fluorides ClF3, BrF3, BrF5, and IF5, in analogy to XeF2 etching silicon. Nearly complete selectivity over SiO2 is achieved in all cases. By contrast, ClF and Groups III and V fluorides such as NF3, BF3, PF3, and PF5 do not spontaneously etch either Si or SiO2 under the same experimental conditions. These relatively inexpensive interhalogens can be applied to pattern silicon and more generally to remove silicon or polysilicon layers without a plasma. Low‐temperature plasmaless gasification of substrates by these fluorine‐containing interhalogens is an economically attractive alternative to fluorine‐based plasma etching.read more
Citations
More filters
Journal ArticleDOI
Bulk micromachining of silicon
TL;DR: In this article, the available etching methods fall into three categories in terms of the state of the etchant: wet, vapor, and plasma, and they are reviewed and compared by comparing the results, cost, complexity, process compatibility, and other factors.
Journal ArticleDOI
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment
TL;DR: In this article, an intensive study has been performed to understand and tune deep reactive ion etch (DRIE) processes for optimum results with respect to the silicon etch rate, etch profile and mask etch selectivity.
Patent
Microelectronic mechanical system and methods
TL;DR: In this paper, a multi-layer structure has a capping layer, that preferably comprises silicon oxide and/or silicon nitride, and which is formed over an etch resistant substrate.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Patent
Plasmaless dry contact cleaning method using interhalogen compounds
TL;DR: In this paper, a method of removing an oxide layer from an article was proposed, where the article may be located in a reaction chamber into which an interhalogen compound reactive with the oxide layer is introduced.
References
More filters
Journal ArticleDOI
The reaction of fluorine atoms with silicon
TL;DR: In this paper, a detailed model of silicon gasification is presented which accounts for the low atomic fluorine reaction probability (0.00168 at room temperature) and formation of SiF2 as a direct product.
Journal ArticleDOI
The design of plasma etchants
TL;DR: Theory and practice of plasma etching are reviewed in this article, and some unifying principles are extended to explain a large body of experimental data, encompassing more than 20 substrate materials in dozens of etchant gas mixtures.
Journal ArticleDOI
Comparison of XeF2 and F‐atom reactions with Si and SiO2
TL;DR: In this article, the authors compared the performance of XeF2 and F•atom etching under conditions typical of those used in plasma etching and showed that physisorption can limit silicon etching.