Journal ArticleDOI
Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing
Keisuke Ohdaira,Kazuhiro Shiba,Hiroyuki Takemoto,Tomoko Fujiwara,Yohei Endo,Shogo Nishizaki,Young Rae Jang,Hideki Matsumura +7 more
TLDR
Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA), whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization as mentioned in this paper.About:
This article is published in Thin Solid Films.The article was published on 2009-04-30. It has received 21 citations till now. The article focuses on the topics: Carbon film & Amorphous solid.read more
Citations
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Journal ArticleDOI
Explosive crystallization of amorphous silicon films by flash lamp annealing
TL;DR: Explosive crystallization (EC) takes place during flash lamp annealing in micrometer-thick amorphous Si (a-Si) films deposited on glass substrates.
Journal ArticleDOI
A review of thermal processing in the subsecond range: semiconductors and beyond
Journal ArticleDOI
Intense pulsed light processing for photovoltaic manufacturing
TL;DR: In this article, the use of pulsed light in photovoltaic manufacturing is discussed from a photonic physics perspective, the relevant heat transfer mechanisms, as well as its impact on the major PV manufacturing sectors.
Journal ArticleDOI
Variation of crystallization mechanisms in flash-lamp-irradiated amorphous silicon films
TL;DR: In this paper, the microstructure of flash-lamp-crystallized poly-Si films is controlled by the ignition of EC at Si film edges and the homogeneous heating of interior a-Si.
Journal ArticleDOI
Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films
Yohei Endo,Tomoko Fujiwara,Keisuke Ohdaira,Shogo Nishizaki,Kensuke Nishioka,Hideki Matsumura +5 more
TL;DR: In this paper, a thin-film solar cell was fabricated using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5µm-thick amorphous Si (a-Si), deposited on Cr-coated glass substrates.
References
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Journal ArticleDOI
Crystal grain nucleation in amorphous silicon
TL;DR: In this paper, the morphological evolution of the amorphous towards the polycrystalline phase is investigated by transmission electron microscopy and it is interpreted in terms of a physical model containing few free parameters related to the thermodynamical properties of ammorphous silicon and to the kinetical mechanisms of crystal grain growth.
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Evolution of microstructure and phase in amorphous, protocrystalline, and microcrystalline silicon studied by real time spectroscopic ellipsometry
Robert W. Collins,Andre S. Ferlauto,G.M. Ferreira,Chi Chen,Joohyun Koh,R.J. Koval,Yeeheng Lee,Joshua M. Pearce,C.R. Wronski +8 more
TL;DR: In this article, real-time spectroscopic ellipsometry has been applied to develop deposition phase diagrams that can guide the fabrication of hydrogenated silicon (Si:H) thin films at low temperatures.
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Formation of Highly Uniform Micrometer-Order-Thick Polycrystalline Silicon Films by Flash Lamp Annealing of Amorphous Silicon on Glass Substrates
TL;DR: In this paper, flash lamp annealing of amorphous silicon (a-Si) films without thermal damage onto glass substrates was used for polycrystalline silicon formation.
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Rapid thermal annealing of hot wire chemical-vapor-deposited a-Si:H films: The effect of the film hydrogen content on the crystallization kinetics, surface morphology, and grain growth
TL;DR: In this paper, the effect of hydrogen content in as-grown films on the crystallization kinetics, surface morphology, and grain growth for hot wire chemical-vapor-deposited a-Si:H films crystallized by rapid thermal annealing (RTA).
Journal ArticleDOI
High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
Keisuke Ohdaira,Shogo Nishizaki,Yohei Endo,Tomoko Fujiwara,Noritaka Usami,Kazuo Nakajima,Hideki Matsumura +6 more
TL;DR: In this article, flash lamp annealing was used to improve the minority carrier lifetime of polycrystalline silicon (poly-Si) films with a thickness of 1.5 µm.