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Journal ArticleDOI

Quadruple well CMOS MAPS with time-invariant processor exposed to ionizing radiation and neutrons

TLDR
In this article, a quadruple well CMOS active pixel sensor with a front-end channel has been fabricated in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications.
Abstract
Monolithic active pixel sensors featuring a timeinvariant front-end channel have been fabricated in a quadruple well CMOS process in the frame of an R&D project aiming at developing low material budget, radiation hard detectors for tracking applications. MAPS prototypes have been exposed to integrated fluences up to 1014 1 MeV neutron equivalent/cm2 to test the device tolerance to bulk damage also for different values of the epitaxial layer resistivity. Moreover, samples of the same device have been irradiated with γ-rays from a 60Co source, reaching a final dose exceeding 10 Mrad, to study ionizing radiation effects. This work discusses the test results, obtained through different measurement techniques, and the mechanisms underlying performance degradation in irradiated quadruple well CMOS MAPS.

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Citations
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The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite

TL;DR: In this article, the authors report the measurement of the variation of charge collection efficiency produced by displacement damage caused by protons and the comparison with the expected damage in orbit during the assessment phase.
Journal ArticleDOI

The effect of the displacement damage on the Charge Collection Efficiency in Silicon Drift Detectors for the LOFT satellite

TL;DR: In this article, the authors report the measurement of the variation of charge collection efficiency produced by displacement damage caused by protons and the comparison with the expected damage in orbit during the LOFT assessment phase.
References
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Journal ArticleDOI

CMOS image sensors: electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal Article

CMOS image sensors: Electronic camera-on-a-chip

TL;DR: In this article, the requirements for CMOS image sensors and their historical development, CMOS devices and circuits for pixels, analog signal chain, and on-chip analog-to-digital conversion are reviewed and discussed.
Journal ArticleDOI

Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal‐oxide‐semiconductor devices

TL;DR: In this article, a revised nomenclature for defects in MOS devices was developed, which clearly distinguishes the language used to describe the physical location of defects from that used to describing their electrical response.
Journal ArticleDOI

Radiation-induced edge effects in deep submicron CMOS transistors

TL;DR: In this article, the authors studied the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology and demonstrated that the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift.
Journal ArticleDOI

Large-signal analysis of MOS varactors in CMOS -G/sub m/ LC VCOs

TL;DR: In this article, the large-signal swing of the VCO output oscillation modulates the varactor capacitance in time, resulting in a VCO tuning curve that deviates from the dc tuning curve of the particular varactor structure.
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