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Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications

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TLDR
A comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented in this article , together with fundamental electrochemical and physicochemical phenomena underlying device functionalities, together with fundamentals of electronic ballistic conduction transport in nanofilaments.
Abstract
Quantum effects in novel functional materials and new device concepts represent a potential breakthrough for the development of new information processing technologies based on quantum phenomena. Among the emerging technologies, memristive elements that exhibit resistive switching, which relies on the electrochemical formation/rupture of conductive nanofilaments, exhibit quantum conductance effects at room temperature. Despite the underlying resistive switching mechanism having been exploited for the realization of next‐generation memories and neuromorphic computing architectures, the potentialities of quantum effects in memristive devices are still rather unexplored. Here, a comprehensive review on memristive quantum devices, where quantum conductance effects can be observed by coupling ionics with electronics, is presented. Fundamental electrochemical and physicochemical phenomena underlying device functionalities are introduced, together with fundamentals of electronic ballistic conduction transport in nanofilaments. Quantum conductance effects including quantum mode splitting, stability, and random telegraph noise are analyzed, reporting experimental techniques and challenges of nanoscale metrology for the characterization of memristive phenomena. Finally, potential applications and future perspectives are envisioned, discussing how memristive devices with controllable atomic‐sized conductive filaments can represent not only suitable platforms for the investigation of quantum phenomena but also promising building blocks for the realization of integrated quantum systems working in air at room temperature.

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Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

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Variability in Resistive Memories

TL;DR: In this article , a review of the most recent advancements in the treatment of variability in resistive memories is presented, with the aim of presenting the most recently advancements in their treatment, and special emphasis is put on the modeling part because the accurate representation of the phenomenon is critical for circuit designers.
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Mean Field Theory of Self‐Organizing Memristive Connectomes

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Molecular nanoarchitectonics: unification of nanotechnology and molecular/materials science

TL;DR: Nanoarchitectonics as a post-nanotechnology concept is a methodology for developing functional material systems using units such as atoms, molecules, and nanomaterials as discussed by the authors .
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Reconfigurable 2D-ferroelectric platform for neuromorphic computing

TL;DR: Based on the room-temperature out-of-plane and in-plane intercorrelated polarization effect of 2D α-In2Se3, this paper designed a reconfigurable hardware platform, which can switch from continuously modulated conductance for emulating synapse to spiking behavior for mimicking neuron.
References
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Journal ArticleDOI

Electric Field Effect in Atomically Thin Carbon Films

TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Book

A Treatise on Electricity and Magnetism

TL;DR: The most influential nineteenth-century scientist for twentieth-century physics, James Clerk Maxwell (1831-1879) demonstrated that electricity, magnetism and light are all manifestations of the same phenomenon: the electromagnetic field as discussed by the authors.
Journal ArticleDOI

The missing memristor found

TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal ArticleDOI

Memristor-The missing circuit element

TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Journal ArticleDOI

Nanoionics-based resistive switching memories

TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
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