Journal ArticleDOI
Nanoionics-based resistive switching memories
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TLDR
A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.Abstract:
Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.read more
Citations
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The missing memristor found
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Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
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Nanoscale Memristor Device as Synapse in Neuromorphic Systems
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Memristive devices for computing
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Phase-change materials for rewriteable data storage
Matthias Wuttig,Noboru Yamada +1 more
TL;DR: This review looks at the unique property combination that characterizes phase-change materials, in particular the contrast between the amorphous and crystalline states, and the origin of the fast crystallization kinetics.
References
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Journal ArticleDOI
Phase-change materials for rewriteable data storage
Matthias Wuttig,Noboru Yamada +1 more
TL;DR: This review looks at the unique property combination that characterizes phase-change materials, in particular the contrast between the amorphous and crystalline states, and the origin of the fast crystallization kinetics.
Journal ArticleDOI
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
TL;DR: It is demonstrated that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3, and to be related to the self-doping capability of the early transition metal oxides.
Journal ArticleDOI
Nanoelectronics from the bottom up
Wei Lu,Charles M. Lieber +1 more
TL;DR: This review presents a brief summary of bottom-up and hybrid bottom- up/top-down strategies for nanoelectronics with an emphasis on memories based on the crossbar motif, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers.
Journal ArticleDOI
Nanoionics: ion transport and electrochemical storage in confined systems.
TL;DR: The crystallizing field of 'nanoionics' bears the conceptual and technological potential that justifies comparison with the well-acknowledged area of nanoelectronics, and implies both emphasizing the indispensability of electrochemical devices that rely on ion transport and complement the world of electronics.
Journal ArticleDOI
A [2]Catenane-Based Solid State Electronically Reconfigurable Switch
C. P. Collier,Gunter Mattersteig,Eric W. Wong,Yi Luo,K. C. Beverly,José Sampaio,Françisco M. Raymo,J. Fraser Stoddart,James R. Heath +8 more
TL;DR: In this paper, a solid state, electronically addressable, bistable [2]catenane-based molecular switching device was fabricated from a single monolayer of the [2]-Catenane, anchored with phospholipid counterions, and sandwiched between an n-type polycrystalline silicon bottom electrode and a metallic top electrode.