Journal ArticleDOI
Quantum efficiency of the internal photoelectric effect in silicon and germanium
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In this paper, the quantum efficiency of silicon and germanium has been measured for photon energies up to 6 eV for Si and 5.3eV for Ge and the results for Ge accidentally agree with Vavilov and Britsyn's measurements.Abstract:
The quantum efficiency of silicon and germanium has been measured for photon energies up to 6 eV for Si and 5.3 eV for Ge. Diodes have been constructed with unity collection coefficient in this spectral range. The observed quantum efficieny of silicon in the ultraviolet is much smaller than hitherto believed, i.e., a value of 1.50 is found at 6 eV. The results for Ge accidentally agree with Vavilov and Britsyn’s measurements. An analysis of sources of error in quantum‐efficiency measurements is given.read more
Citations
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Journal ArticleDOI
Highly Efficient Multiple Exciton Generation in Colloidal PbSe and PbS Quantum Dots
Randy J. Ellingson,Matthew C. Beard,Justin C. Johnson,Pingrong Yu,Olga I. Micic,Arthur J. Nozik,Andrew Shabaev,Alexander L. Efros +7 more
TL;DR: It is found that the biexciton effect, which shifts the transition energy for absorption of a second photon, influences the early time transient absorption data and may contribute to a modulation observed when probing near the lowest interband transition.
Journal ArticleDOI
Semiconductor quantum dots and quantum dot arrays and applications of multiple exciton generation to third-generation photovoltaic solar cells.
Arthur J. Nozik,Matthew C. Beard,Joseph M. Luther,Matt Law,Randy J. Ellingson,Justin C. Johnson +5 more
TL;DR: The general principles of QD synthesis are summarized using InP as an example and applications of QDs and QD arrays in novel quantum dot PV cells, where multiple exciton generation from single photons could yield significantly higher PV conversion efficiencies are discussed.
Journal ArticleDOI
Multiple exciton generation in semiconductor quantum dots
Arthur J. Nozik,Arthur J. Nozik +1 more
TL;DR: In this paper, the authors present a review of recent work on the origin of the concept of enhanced multiple electron-hole pair (i.e. exciton) production in semiconductor quantum dots (QDs).
Journal ArticleDOI
Energy conversion approaches and materials for high-efficiency photovoltaics
Martin A. Green,Stephen Bremner +1 more
TL;DR: The overall prospects for a range of approaches that can potentially exceed Shockley-Queisser limits are assessed, based on ultimate efficiency prospects, material requirements and developmental outlook.
Journal ArticleDOI
Multiple Exciton Generation in Semiconductor Quantum Dots
TL;DR: If the MEG efficiency can be further enhanced and charge separation and transport can be optimized within QD films, then QD solar cells can lead to third-generation solar energy conversion technologies.
References
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Book ChapterDOI
Ion implantation in semiconductors
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Ion Implantation in Semiconductors
James W. Mayer,József Gyulai +1 more
TL;DR: In this paper, the authors review some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage, and electron activity in compound semiconductors, particularly GaAs.
Journal ArticleDOI
Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K
W. C. Dash,R. Newman +1 more
TL;DR: In this article, the intrinsic absorption spectra of high-purity single-crystal germanium and silicon have been measured at 77\ifmmode^\circ\else\text degree\fi{}K and 300\ifmode^''circ\decrease\textdegree\fi {}K, respectively.
Journal ArticleDOI
Optical Constants of Silicon in the Region 1 to 10 ev
H. R. Philipp,E. Taft +1 more
TL;DR: In this article, the reflectance of a single crystal silicon was measured in the range 1 to 11.3 ev and the phase of the phase was computed using the Kramers-Kronig relation between the real and imaginary parts of the complex function.
Journal ArticleDOI
Review of Germanium Surface Phenomena
TL;DR: Germanium surface behavior has become of great interest recently, chiefly for its importance in the understanding of diode and transistor technology as mentioned in this paper, and the surface may be treated as an assemblage of allowed electron states occurring in the normally forbidden energy range.