Journal ArticleDOI
Relation between surface concentration and average conductivity in diffused layers in germanium
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In this article, an expression for calculating the average conductivity of a diffused layer in semiconductor material as a function of the surface concentration of the diffused impurity and the background impurity concentration is derived.Abstract:
In this paper an expression is derived for calculating the average conductivity of a diffused layer in semiconductor material as a function of the surface concentration of the diffused impurity and the background impurity concentration. Curves are presented depicting the relationship among these parameters for the case of germanium. Included are curves for both diffused impurity types for the complementary error function, gaussian, exponential and linear impurity distributions.read more
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Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
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Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K
S.M. Sze,J.C. Irvin +1 more
TL;DR: In this paper, the resistivity and mobility data of GaAs at 300°K have been analyzed by least-square method and plotted as a function of the impurity concentration, and measured impurity levels in GaAs have been presented in graphical form for the most accurate and up-to-date values.
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Resistivity of bulk silicon and of diffused layers in silicon
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Journal ArticleDOI
Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
S. Brotzmann,Hartmut Bracht +1 more
TL;DR: In this article, the activation enthalpy and pre-exponential factor for dopant diffusion under intrinsic condition were determined to 2.85 eV and 9.1 cm2−1 for P, 2.71 eV for As, and 2.55eV for Sb.
Journal ArticleDOI
Widely Tunable Infrared Antennas Using Free Carrier Refraction
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