Journal ArticleDOI
Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer
TLDR
In this article, the Schottky contact is used as a barrier for the tunneling curent between the subbands of the doping layer and the surface metal, and the energies of occupied and unoccupied levels are determined from distinct structures in the first derivative.About:
This article is published in Solid State Communications.The article was published on 1986-08-01. It has received 45 citations till now. The article focuses on the topics: Schottky barrier & Metal–semiconductor junction.read more
Citations
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Delta- (°-) doping in MBE-grown GaAs: Concept and device application
TL;DR: In this article, the implementation of °-function-like doping profiles during molecular beam epitaxy (MBE) of GaAs by using Si donors and Be acceptors is employed to generate V-shaped potential wells with a quasi-two-dimensional electron (hole) gas and to create a new GaAs sawtooth doping superlattice with strongly reduced energy gap.
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Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures
TL;DR: In this paper, the authors define three fundamental and device aspects associated with δ-doping, and define the prototype structure of δdoping formed by a single atomic plane of Si donors in GaAs allowing to study the 2D electron gas by magnetotransport and tunneling experiments.
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Growth and characterization of a delta‐function doping layer in Si
TL;DR: In this paper, a sheet of donor atoms is incorporated in (100) Si during molecular beam epitaxial growth, and the width of such δ−function doping layers is only a few lattice planes.
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A simple model for delta‐doped field‐effect transistor electronic states
TL;DR: In this article, a simple potential model was proposed to reproduce the main properties of the electronic structure of a delta-doped field effect transistor (FET) and the energy, wavefunctions and other characteristic properties obtained with the proposed model are very close to the results of full selfconsistent calculations.
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Delta-doping of semiconductors
TL;DR: The structural, electrical and optical properties of epitaxial semiconductor layers, delta-doped with impurity atoms, are reviewed in this article, where the electrostatic attraction between free carriers and ionized dopants results in a V-shaped potential well, perpendicular to the dopant plane, which confines the carriers into a quasi-two-dimensional sheet, and quantizes their energy into a series of subbands.
References
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Electron energy levels in GaAs- Ga 1 − x Al x As heterojunctions
Frank Stern,Sankar Das Sarma +1 more
TL;DR: In this article, the energy levels of electrons in GaAs and their sensitivity to various parameters, including acceptor doping level in the GaAs, heterojunction barrier height, effective mass and dielectric-constant discontinuities, interface grading, and ambient temperature are examined.
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Observation of Surface Bound State and Two-Dimensional Energy Band by Electron Tunneling
TL;DR: In this paper, a surface bound state of electrons localized in a narrow accumulation layer at the InAs-oxide interface was observed in a magnetic field of up to 85 kG.
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k→⋅p→ theory, effective-mass approach, and spin splitting for two-dimensional electrons in GaAs-GaAlAs heterostructures
TL;DR: In this paper, a five-level k-ensuremath{rightarrow} √ √ K √ k √ n √ N √ 1/ √ 2/n √ 3/n√ n/n/n−1/n-1/k √ p-type valence-and higher conduction-band edges were derived for conduction band electrons.
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Effect of Level Broadening on the Polarizability in a Two-Dimensional System
TL;DR: The Lindhard polarizability in a two-dimensional system in the self-consistent Born approximation by assuming short-range scatterers is calculated in this article, where the known singularity at q = 2 k F, where k F is the Fermi wave vector, is shown to be rounded off in the presence of impurities.