Journal ArticleDOI
Silicon carbide for microelectromechanical systems
TLDR
In this paper, the material properties, deposition techniques, micromachining processes, and other issues regarding the fabrication of SiC-based sensors and actuators are reviewed, and special emphasis is placed on the properties that make SiC attractive for MEMS, and the Si-based processing techniques that have been adapted to realize SiC MEMS structures and devices.Abstract:
Silicon carbide (SiC) has recently attracted attention as a wide bandgap semiconductor with great potential for microelectromechanical systems (MEMS). SiC exhibits excellent electrical, mechanical, and chemical properties, making it well suited for harsh environment applications where traditional MEMS are constrained by the physical limitations of silicon (Si). This paper reviews the material properties, deposition techniques, micromachining processes, and other issues regarding the fabrication of SiC-based sensors and actuators. Special emphasis is placed on the properties that make SiC attractive for MEMS, and the Si-based processing techniques that have been adapted to realise SiC MEMS structures and devices. An introduction to micromachining is provided for readers not familiar with MEMS fabrication techniques.read more
Citations
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Journal ArticleDOI
Harsh Environment Silicon Carbide Sensors for Health and Performance Monitoring of Aerospace Systems: A Review
TL;DR: This paper reviews the recent advancements in silicon carbide (SiC) process technologies and demonstrations of SiC sensors and electronic circuits in hostile environments, which supports the use ofSiC technology for health and performance monitoring of aerospace systems.
Journal ArticleDOI
A SiC MEMS Resonant Strain Sensor for Harsh Environment Applications
Robert G. Azevedo,D.G. Jones,Anand V. Jog,B. Jamshidi,David R. Myers,Li Chen,Xiao-An Fu,Mehran Mehregany,Muthu B. J. Wijesundara,Albert P. Pisano +9 more
TL;DR: In this paper, a balanced-mass double-ended tuning fork (BDETF) was fabricated from 3C-SiC on a silicon substrate, achieving a selectivity of 5:1 and etch rate of 2500 Aring/min.
Journal ArticleDOI
Advances in silicon carbide science and technology at the micro- and nanoscales
TL;DR: In this article, the authors focus on the materials science and processing technologies for silicon carbide thin films and low dimensional structures, and details recent progress in manufacturing technology, including deposition, metallization, and fabrication of semiconductor microdevices, with emphasis on sensor technology.
Journal ArticleDOI
Fabrication and testing of bulk micromachined silicon carbide piezoresistive pressure sensors for high temperature applications
TL;DR: In this paper, a high-temperature pressure sensor based on polycrystalline 3C-SiC piezoresistors and fabricated by bulk micromachining the underlying 100mm diameter (100) silicon substrate was presented.
References
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Book
Micromachined Transducers Sourcebook
TL;DR: In this paper, the authors present an overview of Micromachining Techniques, Mechanical Transducers, Optical Transducers and Ionizing Radiation Transducers for Microfluidic Devices.
Book
Properties of Silicon Carbide
G. L. Harris,Inspec +1 more
TL;DR: In this paper, basic physical properties optical and paramagnetic properties carrier properties and band structure energy levels surface structure, metallization and oxidation etching diffusion of impurities and ion implantation bulk and epitaxial growth contacts and junctions Schottky diodes.
Journal ArticleDOI
Particle-Packing Phenomena and Their Application in Materials Processing
Dennis R. Dinger,James E. Funk +1 more
TL;DR: The main goals of particle packing research have been to determine how systems of particles pack, to develop algorithms for calculating packing densities and porosities for any distribution of particles (spherical or nonspherical, rough or smooth, wet or dry), and to determine the packing and its properties affect the variety of industrial operations that utilize particle/fluid systems as discussed by the authors.
Journal ArticleDOI
Reactive Ion Etching of SiC Thin Films by Mixtures of Fluorinated Gases and Oxygen
W. ‐S. Pan,Andrew J. Steckl +1 more
TL;DR: In this article, the optical emission spectrum of the RF plasma and the plasma-induced dc bias were monitored to explore the etching mechanisms and the best anisotropic profile was obtained by using gas in the RIE mode.
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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more