Journal ArticleDOI
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
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TLDR
In this paper, a decoupled mode-space solution was proposed for modeling electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors in the ballistic limit.Abstract:
In this article, we present a computationally efficient, two-dimensional quantum mechanical simulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the nonequilibrium Green’s function equations self-consistently with Poisson’s equation, is based on an expansion of the active device Hamiltonian in decoupled mode space. Simulation results from this method are benchmarked against solutions from a rigorous two-dimensional discretization of the device Hamiltonian in real space. While doing so, the inherent approximations, regime of validity and the computational efficiency of the mode-space solution are highlighted and discussed. Additionally, quantum boundary conditions are rigorously derived and the effects of strong off-equilibrium transport are examined. This article shows that the decoupled mode-space solution is an efficient and accurate simulation method for modeling e...read more
Citations
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Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs
TL;DR: In this paper, a detailed performance comparison between conventional n-i-n MOSFET transistors and tunneling field effect transistors (TFETs) is presented, using semiconducting carbon nanotubes as the model channel material.
Journal ArticleDOI
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
TL;DR: In this article, a 3D quantum simulator for the silicon nanowire transistor (SNWT) is presented, where the authors use Buttiker probes to simulate the effects of scattering on both internal device characteristics and terminal currents.
Journal ArticleDOI
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
TL;DR: In this paper, a 3D quantum simulator for the silicon nanowire transistor (SNWT) is presented, where the authors use Buttiker probes to simulate the effects of scattering on both internal device characteristics and terminal currents.
Journal ArticleDOI
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors
TL;DR: In this paper, the authors performed a comprehensive scaling study of Schottky-barrier (SB) carbon nanotube transistors using self-consistent, atomistic scale simulations.
Journal ArticleDOI
Modeling of Nanoscale Devices
TL;DR: An introduction to the nonequilibrium Green's function (NEGF) approach, which is a powerful conceptual tool and a practical analysis method to treat nanoscale electronic devices with quantum mechanical and atomistic effects.
References
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Book
Electronic transport in mesoscopic systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Electronic Transport in Mesoscopic Systems
TL;DR: In this article, preliminary concepts of conductance from transmission, S-matrix and Green's function formalism are discussed. And double-barrier tunnelling is considered.
Book
Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Nanoscale device modeling: the Green’s function method
TL;DR: The non-equilibrium Green's function (NEGF) formalism provides a sound conceptual basis for the devlopment of atomic-level quantum mechanical simulators that will be needed for nanoscale devices of the future as discussed by the authors.
Journal ArticleDOI
Two-dimensional quantum mechanical modeling of nanotransistors
TL;DR: In this article, a framework for 2D quantum mechanical simulation of a nanotransistor/metal oxide field effect transistor is presented, which consists of the nonequilibrium Green's function equations solved self-consistently with Poisson's equation.