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Proceedings ArticleDOI

Simulation based defect printability analysis on Attenuated Phase shifting masks

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TLDR
In this paper, simulated wafer images for Attenuated Phase Shift Mask (ATTPSM) features are performed by the Virtual Stepper System and compared with Aerial Image Measurement System (AIMSTM) simulation at best focus and at multiple defocus levels.
Abstract
Simulated wafer images for Attenuated Phase Shift Mask (ATTPSM) features are performed by the Virtual Stepper System. The ATTPSM test reticles were prepared with programmed defects (hard defects and phase defects) on line/space patterns, contact hole patterns, and rectangle patterns for 150-nm design rules. Each defect area was inspected using KLA-Tencor's UV-HR365 and SLF27 inspection systems. Virtual Stepper simulations are compared with Aerial Image Measurement System (AIMSTM) simulation at best focus and at multiple defocus levels. In addition, simulation accuracy from different inspection images is compared.

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Proceedings ArticleDOI

Simulation-based Defect Printability Analysis on Alternating Phase Shifting Masks for 193nm Lithography

TL;DR: For alternating aperture phase shift masks (AAPSM) and 193 nm (ArF) lithography, the authors have simulated defect printability using inspection images and software-based modeling.
Proceedings ArticleDOI

Simulation-based defect printability analysis for 0.13-μm technology

TL;DR: In this article, the authors describe quantitative evaluation result of a new printability analysis system Printability Analysis Stepper Simulator (PASS), which is based on the same simulator used in this paper.
Proceedings ArticleDOI

Enhanced dispositioning of reticle defects for advanced masks using virtual stepper with automated defect severity scoring

TL;DR: In this article, the authors study and characterize the printability prediction of various defects on high-end masks by Virtual Stepper® System with its improved automated defect severity scoring (ADSSTM) function.
Proceedings ArticleDOI

Defect printability analysis of attenuated PSM using PASStm

TL;DR: In this paper, the authors presented a new version of the PASS (Printability Analysis Stepper Simulator) with the binary mask, which has been extended to Attenuated Phase Shifting Mask (AttPSM) simulation capability.
Proceedings ArticleDOI

Photomask quality assessment strategy at 90-nm technology node with aerial image simulation

TL;DR: In this paper, the authors proposed a new strategy to assess photomask quality by checking the CD variation on wafer (defect printability) using aerial image simulation, which achieved better accuracy for 0.72um contact holes on ArF Att.PSM.
References
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Proceedings ArticleDOI

Wafer printability simulation accuracy based on UV optical inspection images of reticle defects

TL;DR: In this paper, a DUV 4X reduction stepper was used to print a reticle with programmed defects across an exposure/focus matrix, with the minimum feature size being 200 nm.
Proceedings ArticleDOI

Comparison of binary mask defect printability analysis using virtual stepper system and aerial image microscope system

TL;DR: In this article, the effect of mask repairs to resist pattern images for the binary mask case is discussed and the simulated resist lines by AIMS and VSS are both compared to SEM images of resist wafers qualitatively and quantitatively using CD verification.
Proceedings ArticleDOI

Simulation-based defect printability analysis for 0.13-μm technology

TL;DR: In this article, the authors describe quantitative evaluation result of a new printability analysis system Printability Analysis Stepper Simulator (PASS), which is based on the same simulator used in this paper.
Proceedings ArticleDOI

Defect printability analysis of attenuated PSM using PASStm

TL;DR: In this paper, the authors presented a new version of the PASS (Printability Analysis Stepper Simulator) with the binary mask, which has been extended to Attenuated Phase Shifting Mask (AttPSM) simulation capability.
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