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Journal ArticleDOI

SiN/sub x//sulphide passivated GaAs-AlGaAs microdisk lasers

TLDR
In this article, a 40 nm thick encapsulating layer of SiNx over a sulphide passivated microdisk laser was used to improve the lifetime of the microdisk, which achieved a ten-fold increase in the laser output.
Abstract
Semiconductor microdisk lasers serve as a sensitive probe of GaAs/AlGaAs microstructure surface passivation. A 40 nm thick encapsulating layer of SiNx over a sulphide passivated microdisk laser dramatically improved the laser lifetime. Annealing the microdisk laser at 400°C for 300s resulted in a ten-fold increase in the laser output.

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Journal ArticleDOI

Chalcogenide passivation of III–V semiconductor surfaces

TL;DR: In this article, experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III-V semiconductor surfaces are analyzed, including the characteristic features of chemical-bond formation, the atomic structure, and the electronic properties of 3-V surfaces coated with chalkogenide atoms.
Journal ArticleDOI

Optical Processes in Microcavities

TL;DR: In this article, the authors studied optical micro-resonators with dimensions between 0.1 and 10 microns and showed that one can isolate a single mode of the optical field in a cube a half-wavelength on a side with perfectly reflecting walls.
Journal ArticleDOI

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

TL;DR: In this paper, the authors acknowledge support from the EPSRC UK, the Royal Society UK, and the ARC Australia for this work, and also acknowledge the support of the EPSRC UK and ARC Australia.
Journal ArticleDOI

GaAs/AlGaAs microdisk lasers

TL;DR: In this paper, a GaAs/AlGaAs microdisk laser has been achieved using continuous optical pumping at 80 K. Surface passivation with a new sulfur/SiNx process is required in order to achieve steady-state lasing.
Journal ArticleDOI

Fabrication challenges of electrical injection metallic cavity semiconductor nanolasers

TL;DR: In this paper, the authors discuss several fabrication issues that are critical to the device performance, including device patterning, pillar etching, surface passivation and metal deposition, which will determine both optical and electrical properties, especially the lifetime, threshold, and efficiency of a nanolaser.
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