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Open AccessProceedings ArticleDOI

Single Event Upset: An Embedded Tutorial

Fan Wang, +1 more
- pp 429-434
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TLDR
A tutorial study of the radiation-induced single event upset phenomenon caused by external radiation, which is a major source of soft errors in silicon, is presented.
Abstract
With the continuous downscaling of CMOS technologies, the reliability has become a major bottleneck in the evolution of the next generation systems. Technology trends such as transistor down-sizing, use of new materials, and system on chip architectures continue to increase the sensitivity of systems to soft errors. These errors are random and not related to permanent hardware faults. Their causes may be internal (e.g., interconnect coupling) or external (e.g., cosmic radiation). To meet the system reliability requirements it is necessary for both the circuit designers and test engineers to get the basic knowledge of the soft errors. We present a tutorial study of the radiation-induced single event upset phenomenon caused by external radiation, which is a major source of soft errors. We summarize basic radiation mechanisms and the resulting soft errors in silicon. Soft error mitigation techniques with time and space redundancy are illustrated. An industrial design example, the IBM z990 system, shows how the industry is dealing with soft errors these days.

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BookDOI

Soft Errors in Modern Electronic Systems

TL;DR: In this article, the authors provide a comprehensive presentation of the most advanced research results and technological developments enabling understanding, qualifying and mitigating the soft errors effect in advanced electronics, including the fundamental physical mechanisms of radiation induced soft errors, the various steps that lead to a system failure, the modelling and simulation of soft error at various levels (including physical, electrical, netlist, event driven, RTL, and system level modeling and simulation), hardware fault injection, accelerated radiation testing and natural environment testing, soft error oriented test structures, process-level, device level, celllevel, circuit
Journal ArticleDOI

PZT-Based Piezoelectric MEMS Technology

TL;DR: In this article, the authors present recent advancements in the design and fabrication of thin-film (<3μm) lead zirconate titanate (PZT) microelectromechanical system (MEMS) devices.
Proceedings ArticleDOI

Multi Fault Laser Attacks on Protected CRT-RSA

TL;DR: To the knowledge, this is the first practical result of two fault laser attacks on a protected cryptographic application and considering that laser attacks are much more accurate in targeting a particular variable, the significance of the result cannot be overlooked.
Journal ArticleDOI

Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

TL;DR: A simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations, and the results illustrate why a conventional model based on one double-exponential source can be incomplete.
Proceedings ArticleDOI

Fault Model Analysis of Laser-Induced Faults in SRAM Memory Cells

TL;DR: It is investigated whether the bit-set/reset fault model or bit-flip fault model may be encountered in SRAMs and whether fault injections have been performed on the RAM memory of a micro-controller to check the validity of the previous results.
References
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Book

Testing Semiconductor Memories: Theory and Practice

TL;DR: Memory modeling functional testing: reduced functional RAM chip model Functional RAM chip testing functional ROM chip testingfunctional memory array testing functional memory board testing electrical testing: parametric testing dynamic testing on chip testing conclusions: address line scrambling various proofs software package.
Journal ArticleDOI

Soft errors in advanced computer systems

TL;DR: This article comprehensively analyzes soft-error sensitivity in modern systems and shows it to be application dependent.
Journal ArticleDOI

Collection of Charge on Junction Nodes from Ion Tracks

TL;DR: In this paper, an approximate analytical solution expressed as I(t) = Io [exp(-?t) - exp (-st)] (1) where Io is approximately the maximum current, 1/? is the collection time constant of the junction, and 1/s is the time constant for initially establishing the ion track.
Journal ArticleDOI

IBM experiments in soft fails in computer electronics (1978–1994)

TL;DR: The experimental work at IBM over the last fifteen years in evaluating the effect of cosmic rays on terrestrial electronic components became a significant factor in IBM`s efforts toward improved product reliability.
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