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Journal ArticleDOI

Size and temperature dependence of thermoelectric power and electrical resistivity of vacuum-deposited antimony thin films

TLDR
In this paper, the thermoelectric power and electrical conductivity data were combined and simultaneously analyzed using the effective mean free path theory of size effect in thin antimony films developed by Tellier and Pichard et al.
Abstract
Thin antimony films of thicknesses in the range 30 to 200 nm have been vacuum deposited on glass substrates at room temperature. After annealing for about an hour at 500 K, the thermoelectric power and electrical resistivity were measured in vacuum as a function of temperature. The thermoelectric power and electrical conductivity data were combined and simultaneously analysed using the effective mean free path theory of size effect in thin films developed by Tellier and Pichard et al. In addition, their temperature dependence was also analysed. It was found that the thermoelectric power is positive and increases with increasing temperature and is inversely proportional to the thickness of the film. The electrical resistivity was found to be temperature dependent with the temperature coefficient of resistivity being positive, and inversely proportional to the thickness of the film. Analysis combining the data from the thermoelectric power and electrical conductivity measurements has led to the determination of mean free path, carrier concentration, effective mass, Fermi energy and the parameter \(U_g = (d ln l_g /d ln E)_{E = E_F } \) The data were analysed for least squares fitting by local functions, such as the spline functions, which eliminates possible errors in conventional least squares fitting of data using non-local functions valid throughout the range.

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Citations
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Journal ArticleDOI

Study of scattering of charge carriers in thin films of (Bi0.25Sb0.75)2Te3 alloy with 2% excess Te

TL;DR: In this article, the Jain-Verma theory of carrier energy dependent relaxation time was applied to the thermoelectric data of thin films to understand the nature of scattering mechanisms in this material.
Journal ArticleDOI

Study of the crystallization of antimony thin films by transmission electron microscopy observations and electrical measurements

TL;DR: In this paper, correlated electrical measurements and transmission electron microscopy observations of ultrathin antimony films were used to understand the crystallization of antimony, and it was shown that at room temperature, the critical thickness below which no complete crystallization is possible corresponds to the percolation threshold.
Journal ArticleDOI

Antimony thin-film transport properties and size effect

TL;DR: In this article, the thickness dependence of both the de electrical resistivity and the Hall coefficient were earried out at room temperature over a thickness range from 29 nm to 216 nm, and the type of conduction, the concentration and the mobility of charge carriers were revealed.
References
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Thin film phenomena

Journal ArticleDOI

Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces

A. F. Mayadas, +1 more
- 15 Feb 1970 - 
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Journal ArticleDOI

A theory of the irreversible electrical resistance changes of metallic films evaporated in vacuum

Vladimir Vand
TL;DR: In this article, the decay of lattice distortions is investigated and a characteristic function F0 expressing the law of distribution of the decay energies is formulated, calculated from measurements available and found to be of the expected order, and the shape of this function and the position of its maxima depend on the structure of the support and the thickness of the film.
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