Journal ArticleDOI
Spectroscopy of individual silicon nanowires
TLDR
In this article, the optical anisotropy of individual silicon nanowires has been investigated and a narrow emission band was observed associated with a fast luminescence decay in the picosecond region and is considered due to the recombination relaxation of confined electronic states.Abstract:
Photoluminescence (PL) spectroscopy of individual silicon nanowires has been investigated. A narrow emission band (85 meV) was observed associated with a fast luminescence decay in the picosecond region and is considered due to the recombination relaxation of confined electronic states. The optical anisotropy was found in the individual nanowires. When a wire was excited by linearly polarized light, the maximum intensity of linearly polarized PL was along the axis direction of the wire, and the maximum degree of polarization was determined to be 0.5. The value agrees well with the calculated one, which suggests that the polarization arise from the dielectric contrast between the crystalline cores and the silicon oxide sheathes of the nanowires.read more
Citations
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Journal ArticleDOI
Semiconductor nanowires and nanotubes
TL;DR: In this article, a review highlights the recent advances in the field, using work from this laboratory for illustration, and the understanding of general nanocrystal growth mechanisms serves as the foundation for the rational synthetic control of one-dimensional nanoscale building blocks, novel properties characterization and device fabrication based on nanowire building blocks.
Journal ArticleDOI
Strong broadband optical absorption in silicon nanowire films
Loucas Tsakalakos,Joleyn Balch,Jody Fronheiser,Min-Yi Shih,Stephen F. LeBoeuf,Matthew Pietrzykowski,Peter J. Codella,Bas A. Korevaar,Oleg Sulima,James A. Rand,Anilkumar Davuluru,Umakant D. Rapol +11 more
TL;DR: The broadband optical absorption properties of silicon nanowire (SiNW) films fabricated on glass substrates by wet etching and chemical vapor deposition (CVD) have been measured and found to be higher than solid thin films of equivalent thickness.
Journal ArticleDOI
Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors
TL;DR: Optical scanning measurements on photocurrent in individual Si nanowire field effect transistors (SiNW FETs) observe increases in the conductance of more than 2 orders of magnitude and a large conductance polarization anisotropy of 0.8, making these SiNW Fets a polarization-sensitive, high-resolution light detector.
Patent
Nanocomposite materials with engineered properties
TL;DR: In this paper, the authors describe a nonlinear index of refraction γ that is at least 10 −9 cm 2 /W when irradiated with light having a wavelength λ between approximately 3×10 −5 cm and 2 ×10 −4 cm.
Patent
Optical devices with engineered nonlinear nanocomposite materials
TL;DR: In this paper, a waveguide core and a nanocomposite material optically coupled to the waveguide was described. But the authors did not specify the number of quantum dots.
References
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Book
Electrodynamics of continuous media
TL;DR: In this article, the propagation of electromagnetic waves and X-ray diffraction of X rays in crystals are discussed. But they do not consider the effects of superconductivity on superconducting conductors.
Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
A laser ablation method for the synthesis of crystalline semiconductor nanowires
TL;DR: Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
Journal ArticleDOI
Highly polarized photoluminescence and photodetection from single indium phosphide nanowires.
TL;DR: The fundamental photoluminescence properties of individual, isolated indium phosphide nanowires were characterized to define their potential for optoelectronics and create polarization-sensitive nanoscale photodetectors that may prove useful in integrated photonic circuits, optical switches and interconnects, near-field imaging, and high-resolution detectors.
Journal ArticleDOI
Control of Thickness and Orientation of Solution-Grown Silicon Nanowires
TL;DR: Bulk quantities of defect-free silicon nanowires with nearly uniform diameters were grown to a length of several micrometers with a supercritical fluid solution-phase approach, and visible photoluminescence due to quantum confinement effects was observed, as were discrete optical transitions in the ultraviolet-visible absorbance spectra.