Journal ArticleDOI
States in the gap
TLDR
In this paper, experimental evidence about the states in the gap of chalcogenide glasses is discussed and the total concentration of states is estimated from the measurements of the magnetic susceptibility and their density distribution from the optical and photo-emission measurements.Abstract:
Experimental evidence about the states in the gap of chalcogenide glasses is discussed. The total concentration of states is estimated from the measurements of the magnetic susceptibility and their density distribution from the optical and photo-emission measurements. Possible models for the interpretation of the experimental facts are considered.read more
Citations
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Journal ArticleDOI
Intriguing Optoelectronic Properties of Metal Halide Perovskites
TL;DR: This review is a critical account of the interrelation between MHP electronic structure, absorption, emission, carrier dynamics and transport, and other relevant photophysical processes that have propelled these materials to the forefront of modern optoelectronics research.
Book ChapterDOI
Optical Properties of Amorphous Semiconductors
TL;DR: The sharp structure observed in the fundamental optical spectra of crystals, both vibrational and electronic, can be classified and interpreted by symmetry arguments based explicitly on the existence of long-range order as mentioned in this paper.
Journal ArticleDOI
Band gap determination using absorption spectrum fitting procedure
TL;DR: In this article, the absorption spectrum fitting method was applied to estimate the optical band gap and width of the band tail of the CdSe nanostructural films that requires only the measurement of the absorbance spectrum, and no additional information such as the film thickness or reflectance spectra is needed.
Journal ArticleDOI
Influence of thermal annealing on microstructural, morphological, optical properties and surface electronic structure of copper oxide thin films
Funda Aksoy Akgul,Funda Aksoy Akgul,Guvenc Akgul,Guvenc Akgul,Nurcan Yildirim,Nurcan Yildirim,Husnu Emrah Unalan,Rasit Turan +7 more
TL;DR: In this article, the effect of post-deposition thermal annealing on copper oxide thin films has been systemically investigated and a complete characterization of the surface properties of these three phases was obtained.
Journal ArticleDOI
Defect correlated fluorescent quenching and electron phonon coupling in the spectral transition of Eu3+ in CaTiO3 for red emission in display application
Sudipta Som,A.K. Kunti,Vinod Kumar,Vijay Kumar,Somrita Dutta,M. Chowdhury,S. K. Sharma,Jacobus J. Terblans,Hendrik C. Swart +8 more
TL;DR: In this article, a series of CaTiO3 phosphors doped with trivalent europium (Eu3+) and codoped with potassium (K+) ions were prepared by the solid state reaction method and X-ray diffraction results revealed that the obtained powder phosphors consisted out of a single-phase orthorhombic structure and it also indicated that the incorporation of the dopants/co-dopants did not affect the crystal structure.
References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
Journal ArticleDOI
Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors
E. A. Davis,Nevill Mott +1 more
TL;DR: In this article, the experimental evidence concerning the density of states in amorphous semiconductors and the ranges of energy in which states are localized is reviewed; this includes d.c and a.c. conductivity, drift mobility and optical absorption.
Journal ArticleDOI
Intensity of Optical Absorption by Excitons
TL;DR: In this paper, the intensity of optical absorption close to the edge in semiconductors is examined using band theory together with the effective-mass approximation for the excitons, and the experimental results on O and Ge are in good qualitative agreement with direct forbidden and indirect transitions, respectively.
Journal ArticleDOI
Absorption edge and internal electric fields in amorphous semiconductors
TL;DR: In this paper, a simple model based on the existence of internal electric fields is suggested to explain the exponential part of the absorption edge observed in many amorphous semiconductors.
Journal ArticleDOI
Optical and electrical energy gaps in amorphous semiconductors
TL;DR: In this article, a conflict between optical absorption data which reveal only a very small g l (E) and electrical measurements, which predict orders of magnitude larger g l(E) was found.