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Journal ArticleDOI

Strain Effectiveness of Gate-all-around Silicon Transistors with Various Surface Orientations and Cross-sections

Kihwan Kim, +1 more
- 28 Feb 2019 - 
- Vol. 19, Iss: 1, pp 24-29
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This article is published in Journal of Semiconductor Technology and Science.The article was published on 2019-02-28. It has received 1 citations till now. The article focuses on the topics: Silicon & Strain (chemistry).

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Journal ArticleDOI

Strain effect on performance of multi-stacked gate-all-around CMOS inverters

Ki-Hwan Kim, +2 more
- 01 Dec 2020 - 
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