Studies on Anisotype Si/Si1-xGex Heterojunction DDR IMPATTs: Efficient Millimeter-wave Sources at 94 GHz Window

TLDR: In this article, an attempt is made to investigate the millimeter-wave performance of anisotype Si/Si1-xGex heterojunction Double-drift region (DDR) Impact Avalanche Transit Time (IMPATT) devices operating at 94 GHz window frequency by using a generalized double-iterative computer method based on drift-diffusion model developed by the authors.

Abstract: In this paper, an attempt is made to investigate the millimeter-wave performance of anisotype Si/Si1-xGex heterojunction Double-drift region (DDR) Impact Avalanche Transit Time (IMPATT) devices operating at 94 GHz window frequency by using a generalized double-iterative computer method based on drift-diffusion model developed by the authors. Simulation study on both anisotype Np and nP type Si/Si1-xGex heterojunction DDR IMPATTs for Ge mole fractions, x = 0.1 and x = 0.3, is carried out and their mm-wave properties are compared with a Si homojunction DDR IMPATT operating at the same frequency. Results show that significant improvements in DC to RF conversion efficiency and RF power output can be achieved in Si/Si1-xGex heterojunction DDR IMPATTs as compared to their Si homojunction counterpart. It is observed that the mm-wave performance of nP Si0.7Ge0.3/Si heterojunction DDR as regards to RF power output and conversion efficiency is best among all the devices under consideration. DC to RF convers...