Journal ArticleDOI
Sub-10 nm imprint lithography and applications
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TLDR
A new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput is presented.Abstract:
New developments, further details, and applications of imprint lithography are presented. Arrays of 10 nm diameter and 40 nm period holes were imprinted not only in polymethylmethacrylate (PMMA) on silicon, but also in PMMA on gold substrates. The smallest hole diameter imprinted in PMMA is 6 nm. All the PMMA patterns were transferred to a metal using a liftoff. In addition, PMMA mesa’s of a size from 45 nm to 50 μm were obtained in a single imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring transistors, which showed the same behavior as those fabricated using electron (e)-beam lithography. Finally, imprint lithography was used to fabricate nanocompact disks with 10 nm features and 400 Gbits/in.2 data density—near three orders of magnitude higher than current critical dimensions (CDs). A silicon scanning probe was used to read back the data successfully. The study of wear indicates that due to the ultrasmall force in tapping mode, both the nano-CD and the ...read more
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Journal Article
Principles of Surface-Guided Protein Adsorption and Assembly Behavior on Nanopatterned Block Copolymers Revealed at the Single Protein Levelel
TL;DR: In this paper, the authors presented the distinct adsorption configurations of fibrinogen (Fg) proteins and the different organization behaviors between individual Fg molecules that are mediated by the changes in the periodicity and alignment of polystyrene-bpolymethylmethacrylate (PS-b-PMMA) nanodomains.
Proceedings ArticleDOI
Rolled-up nanoporous membranes by nanoimprint lithography and strain engineering
TL;DR: This paper describes a highly parallel approach that combines nanoimprint lithography (NIL) and thin film bilayer strain engineering to spontaneously roll-up nanopatterned membranes into curved geometries that had well defined pores along their curved interface.
Proceedings ArticleDOI
High-fidelity photonic building blocks fabricated using thermal nanoimprint lithography (T-NIL)
TL;DR: In this paper, high-fidelity photonic patterns, feature sizes (80nm to 3µm), using T-NIL were demonstrated, and a CAD file design allows complete elimination of residual layer.
Book ChapterDOI
Combined Approaches for Nanoelectronic Device Fabrication
I. Martini,M. Kamp,A. Forchel +2 more
TL;DR: In this paper, the authors proposed a method to transfer the mask pattern into resist on an industrial high throughput level, mainly the domain of optical lithography, using resolution enhancement techniques (RET).
Proceedings ArticleDOI
Fabrication of silicon mold for thermal Nanoimprint Lithography
TL;DR: In this article, a silicon mold for thermal nanoimprint Lithography (NIL) with EB exposure and Deep-RIE was fabricated, including a grating whose pitch was 230nm with low roughness.
References
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Journal ArticleDOI
Single Charge Tunneling: Coulomb Blockade Phenomena in Nanostructures
TL;DR: Averin et al. as discussed by the authors proposed a single charge tunneling method to transfer electrons one-by-one in low-Capacitance tunnel junctions, and applied it to semiconductor nanostructures.