Journal ArticleDOI
Surface infrared study of Si(100)-(2×1)H
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Combination de la spectrometrie IR et de calculs ab initio sur des agregats pour la determination complete de la geometrie and des parametres vibrationnels de cette structure.Abstract:
Combinaison de la spectrometrie IR et de calculs ab initio sur des agregats pour la determination complete de la geometrie et des parametres vibrationnels de cette structureread more
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Journal ArticleDOI
Ideal hydrogen termination of the Si (111) surface
TL;DR: In this article, the effect of varying the solution pH on the surface structure was studied by measuring the SiH stretch vibrations with infrared absorption spectroscopy, and the surface was found to be very homogeneous with low defect density (<0.5%) and narrow vibrational linewidth.
Journal ArticleDOI
Surface infrared spectroscopy
TL;DR: The theoretical and experimental foundation of surface IR spectroscopy is described and selected examples are presented to illustrate the kind of information derived in several important areas of surface science such as chemistry, structure, dynamics and kinetics at surfaces as discussed by the authors.
Journal ArticleDOI
Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
Journal ArticleDOI
Atomic scale desorption through electronic and vibrational excitation mechanisms
T. C. Shen,C. Wang,G. C. Abeln,J. R. Tucker,Joseph W. Lyding,Phaedon Avouris,Robert E. Walkup +6 more
TL;DR: The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon surfaces and a countable number of desorption sites can be created and the yield and cross section are obtained.
Journal ArticleDOI
The formation of hydrogen passivated silicon single‐crystal surfaces using ultraviolet cleaning and HF etching
TL;DR: In this paper, the clean surface of a silicon single crystal was prepared with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition.