Journal ArticleDOI
Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs.
TLDR
The symmetry, reorientation kinetics, and coupling of the ground-state energy to stress have been determined for the Si As -H complex in GaAs from uniaxial stress data.Abstract:
The symmetry, reorientation kinetics, and coupling of the ground-state energy to stress have been determined for the Si As -H complex in GaAs from uniaxial stress data. The stress-induced frequency shifts of the H-stretching vibration at 2094.5 cm -1 are consistent with trigonal symmetry for the defect. The application of stress at temperatures above 85 K gives rise to a preferential alignment of the defect. The reorientation of the complex is thermally activated with an activation energy of 0.26 eV. The uniaxial stress data are consistent with the hydrogen atom being on the trigonal axis between the Si acceptor and a nearest-neighbor gallium atomread more
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The lattice locations of silicon impurities in GaAs: effects due to stoichiometry, the Fermi energy, the solubility limit and DX behaviour
TL;DR: In this article, an outline of infrared localized vibrational mode absorption spectroscopy relevant to silicon impurities in GaAs is presented, which is related to the electrical properties of n-type Bridgman, liquid-encapsulated Czochralski and molecular beam epitaxial (MBE) (001) GaAs.
Journal ArticleDOI
Hydrogen motion in the Cu-H complex in ZnO
TL;DR: In this article, the authors studied the motion of hydrogen in the Cu-H complex by the stress-induced dichroism and found that the reorientation process was thermally activated with the activation energy of $0.04 ± 0.3em.
Journal ArticleDOI
Hydrogen-impurity complexes in III–V semiconductors
TL;DR: In this paper, the authors summarized the presently available knowledge concerning hydrogen-impurity complexes in III-V compounds in GaAs, GaP, and InP and discussed the properties of these complexes.
Journal ArticleDOI
Hydrogen motion in rutile TiO2.
TL;DR: It is found that the activation energy value deduced from the low-temperature stress measurements yields a very good agreement with the high-tem temperature data, covering a dynamic range of 12 orders of magnitude.
Patent
Pyroelectric compound and method of its preparation
TL;DR: In this paper, a pyroelectric compound is presented, which is inorganic, quasi-amorphous oxide compound of a metal, mixture of metals or semiconducting element.