Journal ArticleDOI
Temperature dependence of the dielectric function of germanium
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TLDR
In this paper, the dielectric constant of undoped Ge was measured between 1.25 and 5.6 eV in the temperature range of 100 to 850 K. The dependence of the critical energies on temperature was obtained.Abstract:
Ellipsometric measurements of the dielectric constant of undoped Ge were performed between 1.25 and 5.6 eV in the temperature range of 100 to 850 K. The dependence of the ${E}_{1}$, ${E}_{1}+{\ensuremath{\Delta}}_{1}$, ${E}_{0}^{\ensuremath{'}}$, and ${E}_{2}$ critical energies on temperature was obtained. It can be represented either with Varshni's empirical formula or with an expression proportional to the Bose-Einstein statistical factor of an average phonon. Broadening parameters, amplitudes, and phase angles for the corresponding critical points were also obtained. A decrease of the excitonic interaction with increasing temperature was found. The results are discussed in the light of recent calculations of the effect of temperature on the band structure of Ge containing Debye-Waller and self-energy contributions.read more
Citations
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Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Temperature dependence of semiconductor band gaps
K. P. O’Donnell,X. Chen +1 more
TL;DR: In this article, a new three-parameter fit to the temperature dependence of semiconductor band gaps was proposed, based on the semi-empirical Varshni equation.
Journal ArticleDOI
Semiconductor Spintronics
TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
Journal ArticleDOI
Photoluminescence of AlxGa1−xAs alloys
Lorenzo Pavesi,Mario Guzzi +1 more
TL;DR: In this article, a detailed discussion of spectral features of the photoluminescence spectra of undoped, p−doped and n−doping AlxGa1−xAs (0≤x≤1) alloys is given.
Journal ArticleDOI
Acoustic deformation potentials and heterostructure band offsets in semiconductors.
Manuel Cardona,N. E. Christensen +1 more
TL;DR: In this paper, it is argued that the absolute hydrostatic deformation potentials for tetrahedral semiconductors with the linear muffin-tin-orbital method must be screened by the dielectric response of the material before using them to calculate electron-phonon interaction.
References
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Journal ArticleDOI
Smoothing and Differentiation of Data by Simplified Least Squares Procedures.
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Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
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Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
David E. Aspnes,A. A. Studna +1 more
TL;DR: In this paper, the pseudodielectric functions of spectroscopic ellipsometry and refractive indices were measured using the real-time capability of the spectro-optical ellipsometer.
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Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.