Journal ArticleDOI
The boron acceptor in diamond
TLDR
The only dopant available for bulk diamond with good controllability is boron, which acts as an acceptor and can be incorporated in relatively high concentrations, allowing the design of devices for electronic applications.Abstract:
To date, the only dopant available for bulk diamond with good controllability is boron, which acts as an acceptor and can be incorporated in relatively high concentrations, allowing the design of devices for electronic applications. This paper summarizes data on doping procedures and on optical and electrical properties.read more
Citations
More filters
Journal ArticleDOI
High hole mobility in boron doped diamond for power device applications
TL;DR: In this article, low boron doped homoepitaxial diamond layers were grown on Ib (100) diamond substrates with oxygen added to the gas mixture and the acceptor density of the samples has been estimated by C(V) and Hall effect to lie close to 1016 cm−3 with a maximum low field Hall mobility value of 1870 cm2/V
Impurity Conduction at Low Concentrations.
TL;DR: In this article, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI
Theory of boron aggregates in diamond: First-principles calculations
TL;DR: In this paper, the authors present the results of first-principles calculations regarding the structure and properties of boron-aggregates, and simple complexes with native defects.
Journal ArticleDOI
Interaction of hydrogen with boron, phosphorus, and sulfur in diamond
TL;DR: In this article, it is shown that the S-H pair is stable under conditions of limited H availability and that the B-D pair is also stable under limited hydrogen availability, and that it is energetically favorable for hydrogen to be trapped and to passivate boron and phosphorus.
Journal Article
Synthesis of Diamond Thin Films Having Semiconductive Properties : Surfaces, Interfaces and Films
TL;DR: In this article, a saturated solution of B2O3 powder in CH3OH mixed with acetone was used to identify the diamond films as diamond by several methods including Raman spectroscopy.
References
More filters
Journal ArticleDOI
Impurity Conduction at Low Concentrations
A. J. Miller,Elihu Abrahams +1 more
TL;DR: In this paper, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI
Vapor growth of diamond on diamond and other surfaces
TL;DR: In this article, the growth rate of homoepitaxial diamond films reached 1 μm/h at 1000°C; film properties were identical to those of bulk crystals.
Journal ArticleDOI
Origin of Surface Conductivity in Diamond
TL;DR: Experimental evidence is given that hydrogen is only a necessary requirement for SC; exposure to air is also essential and a mechanism in which a redox reaction in an adsorbed water layer provides the electron sink for the subsurface hole accumulation layer is proposed.
Journal ArticleDOI
Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus
G. L. Pearson,John Bardeen +1 more
TL;DR: In this paper, it was shown that at high temperatures, the electron and hole mobilities of pure silicon alloys are independent of temperature, and at lower temperatures scattering by both ionized and neutral impurity centers contribute, and the mobility is largest for the more pure samples.
Journal ArticleDOI
Optical absorption and luminescence in diamond
TL;DR: In this paper, a review of the important point defects observed optically in diamond is presented, and the relevance of the experimental results to the current controversy about how to calculate the properties of point defects is brought out.