Journal ArticleDOI
The effect of doping on the formation of swirl defects in dislocation-free czochralski-grown silicon crystals
TLDR
In this article, the effect of doping with electrically active impurities (B, Ga, Sb, P and As) on the formation of micro-defects has been investigated by means of preferential etching, copper and lithium decoration, X-ray transmission topography and EBIC-mode SEM.About:
This article is published in Journal of Crystal Growth.The article was published on 1980-08-01. It has received 123 citations till now. The article focuses on the topics: Doping & Dopant.read more
Citations
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Journal ArticleDOI
The mechanism of swirl defects formation in silicon
TL;DR: In this article, the first stage of defect formation is recombination and diffusion of vacancies and self-interstitials in the vicinity of the crystallization front, followed by several successive stages: diffusion of interstitials to the crystal surface, nucleation of primary interstitial clusters, cluster growth, conversion of clusters into other forms (particularly dislocation loops).
Journal ArticleDOI
Vacancy-type microdefect formation in Czochralski silicon
V.V. Voronkov,R. Falster +1 more
TL;DR: In this paper, the quantitative model of void formation is considered to provide the nucleation temperature, density and size of voids dependent on the starting vacancy concentration and the cooling rate.
Journal ArticleDOI
Intrinsic point defects and impurities in silicon crystal growth
Vladimir V. Voronkov,R. Falster +1 more
TL;DR: In this article, the incorporation of intrinsic point defects into a growing crystal is affected by the presence of impurities that can react with vacancy and self-interstitials, and the critical value of the ratio of the growth rate,V, to the axial temperature gradient, G, is shifted by impurities, and this effect can bedescribed by simple analytical expressions.
Patent
Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
TL;DR: In this article, a process for preparing a single crystal silicon ingot, as well as to the ingot or wafer resulting therefrom, is described, which comprises controlling a growth velocity, v, an average axial temperature gradient, G 0, and a cooling rate of the crystal from solidification to about 750°C.
Patent
Low defect density, ideal oxygen precipitating silicon
Marco Cornara,Robert J. Falster,Daniela Gambaro,Joseph C. Holzer,Bayard K. Johnson,Steve A. Markgraf,Seamus A. Mcquaid,Paolo Mutti,Massimiliano Olmo +8 more
TL;DR: In this article, the authors characterized a single crystal silicon wafer which, during the heat treatment cycles of essentially any electronic device manufacturing process, will form an ideal, non-uniform depth distribution of oxygen precipitates.
References
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Book
Comprehensive inorganic chemistry
TL;DR: In this article, the transition elements involving metal-metal bonds are defined and an introductory essay is given, along with a discussion of homogeneous catalysis and transition metal chemistry, B L Shaw & N I Tucker.
Journal ArticleDOI
Electrical Properties of Silicon Containing Arsenic and Boron
F. J. Morin,J. P. Maita +1 more
TL;DR: In this article, the authors measured the electrical conductivity and Hall effect of single-crystal silicon containing arsenic and boron and derived the intrinsic Hall mobility from Hall coefficient and conductivity.
Journal ArticleDOI
Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide
R. N. Hall,J. H. Racette +1 more
TL;DR: In this paper, the solubilities of substitutional and interstitial copper (Cus and Cui) have been measured in intrinsic and extrinsic n and p-type Ge, Si, and GaAs, using Cu64.
Journal ArticleDOI
Diffusion mechanisms and point defects in silicon and germanium.
Journal ArticleDOI
A New Preferential Etch for Defects in Silicon Crystals
TL;DR: A preferential etch for (100 and (111) oriented, p and n-type silicon has been developed in this paper with a relatively slow etch rate (∼1 μm per min) at room temperature providing etch control.